8550SS

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTOR (PNP) TO – 92 FEATURES z General Purpose Switching and Amplification. 1.EMITTER 2.COLLECTOR 3.BASE Equivalent Circuit  8550SS Z XXX 8550SS=Device code Z=Rank of hFE XXX=Code GXX=Green molding compound device CXX=Normal molding compound device 1 ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 8550SS TO-92 Bulk 1000pcs/Bag 8550SS-TA TO-92 Tape 2000pcs/Box  MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V -1.5 A 1 W 125 ℃ /W -55~+150 ℃ IC Collector Current -Continuous PC Collector Power Dissipation R θ JA TJ,Tstg www.jscj-elec.com Thermal Resistance From Junction To Ambient Operation Junction and Storage Temperature Range 1 Rev. - 2.1  Ta =25 Я unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage IC= -0.1mA,IE 0 V(BR)CBO= -40 V Collector-emitter breakdown voltage = IC=-0.1mA,IB 0 V(BR)CEO -25 V Emitter-base breakdown voltage = IE=-0.1mA,IC 0 V(BR)EBO -5 V Collector cut-off current = VCB=-40V,IE 0 ICBO -0.1 μA Collector cut-off current ICEO = VCE=-20V,IB 0 -0.1 μA -0.1 μA Emitter cut-off current DC current gain = VEB=-5V,IC 0 IEBO hFE(1) = VCE=-1, IC -100mA 85 hFE(2) 40 = VCE=-1V, IC -800mA 300 Collector-emitter saturation voltage VCE(sat) IC=-800mA,IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) = IC=-800mA,IB -80mA -1.2 V fT Transition frequency VCE=-10V,IC=-50mA,f=30MHz 100 MHz CLASSIFICATION OF hFE(1) RANK B C D RANGE 85-160 120-200 160-300 www.jscj-elec.com 2 Rev. - 2.1 Typical Characteristics Static Characteristic -0.25 -0.8mA -0.7mA -0.6mA -0.15 -0.5mA -0.4mA -0.10 IC Ta=100℃ hFE - 0.9mA -0.20 —— COMMON EMITTER Ta=25℃ 300 DC CURRENT GAIN COLLECTOR CURRENT hFE 1000 -1mA IC (A) -0.30 Ta=25℃ 100 -0.3mA -0.2mA -0.05 COMMON EMITTER VCE= -1V IB=-0.1mA -0.00 -0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE VCEsat -1000 —— VCE (V) -6 10 -7 -1 -10 -100 COLLECTOR CURRENT IC VBEsat —— -1200 -1000 -1500 IC (mA) IC BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 -100 Ta=100 ℃ Ta=25℃ -10 -1 -800 Ta=25℃ -600 Ta=100 ℃ -400 β=10 -1 -10 COLLECTOR CURREMT IC -1500 —— -100 IC β=10 -1000 -1500 (mA) -1 VBE -10 -100 COLLECTOR CURREMT Cob/Cib 100 —— IC (mA) VCB/VEB f=1MHz IE=0/IC=0 -1000 Ta=25 ℃ Cob C CAPACITANCE T= a 25 ℃ T= a 10 0℃ COLLECTOR CURRENT IC (pF) (mA) Cib -100 -1000 -1500 -10 10 COMMON EMITTER VCE= -1V -0 -300 -600 -900 BESE-EMITER VOLTAGE VBE (mV) fT —— IC fT TRANSITION FREQUENCY 200 COMMON EMITTER VCE=-10V Ta=25℃ 100 -5 www.jscj-elec.com -10 -30 COLLECTOR CURRENT -1 REVERSE VOLTAGE PC 1.2 (MHz) 300 1 -0.1 -1200 COLLECTOR POWER DISSIPATION PC (W) -1 IC (mA) —— V -10 (V) -20 Ta 1.0 0.8 0.6 0.4 0.2 -30 0.0 -100 3 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃ ) 125 150 Rev. - 2.1 723DFNDJH2XWOLQH'LPHQVLRQV 6\P RO A A1 b c D D1 E e e1 L Κ h LPHQVLRQV,Q0LOOLPHWHUV LPHQVLRQV,Q,QFKHV 0LQ 0D[ 0LQ 0D[ 3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4. 4.700 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015 726XJJHVWHG3DG/D\RXW NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.1 72Tape and Reel www.jscj-elec.com 5 Rev. - 2.1