A1015

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Parameter Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW RθJA Thermal Resistance From Junction To Ambient 625 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -100u A,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100 u A, IC=0 -5 V Collector cut-off current ICBO VCB=-50V ,IE=0 -0.1 μA Collector cut-off current ICEO VCE= -50V , IB=0 -0.1 μA Emitter cut-off current IEBO VEB=- 5V, IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC= -2mA 130 400 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -10mA -1.1 V fT Transition frequency VCE=-10V,IC= -1mA f=30MHz 80 MHz CLASSIFICATION OF hFE Rank Range L H 130-200 200-400 B,Nov,2012