A92

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors A92 TO-92 TRANSISTOR (PNP) FEATURES High voltage 1.EMITTER 2.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 3.COLLECTOR Value Units VCBO Collector-Base Voltage -310 V VCEO Collector-Emitter Voltage -305 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 mA ICM Collector Current -Pulsed -500 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RӨJA Thermal Resistance, Junction to Ambient 200 ℃/mW RӨJC Thermal Resistance, Junction to Case 83.3 ℃/mW ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -310 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -305 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB= -200 V Emitter cut-off current IEBO VEB= -5 V, IC=0 hFE(1) VCE= -10 V, IC=- 1 mA 60 hFE(2) VCE= -10V, IC = -10 mA 80 hFE(3) VCE= -10 V, IC= -80 mA 60 DC current gain IE=0 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) IC= -20 mA, IB= -2 mA fT VCE= -20 V, IC= -10 mA f = 30MHz Transition frequency IC= -20 mA, IB= -2 mA -0.25 μA -0.1 μA 250 -0.2 V -0.9 V 50 MHz CLASSIFICATION OF hFE(2) Rank Range www.cj-elec.com A B C 80-100 100-200 200-250 1 F,May,2015 Typical Characteristics IC 70 (mA) -300uA 40 -250uA -200uA 30 -150uA 20 IC Ta=100℃ Ta=25℃ 100 -100uA 10 IB=-50uA COMMON EMITTER VCE= -10V 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat —— 20 10 -0.1 24 -1 VCE (V) -10 -100 COLLECTOR CURRENT IC VBEsat —— -900 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -500 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— hFE -350uA DC CURRENT GAIN IC -400uA 50 hFE 1000 COMMON EMITTER Ta=25℃ -450uA 60 COLLECTOR CURRENT VCE —— -500uA Ta=100 ℃ -100 Ta=25℃ IC IC Ta=25℃ -600 Ta=100 ℃ β=10 β=10 -50 -10 -0.1 -1 -10 COLLECTOR CURREMT IC -100 —— IC -1 -10 COLLECTOR CURREMT (mA) fT VBE -100 (mA) IC IC —— (MHz) 300 fT (mA) T =2 5℃ a TRANSITION FREQUENCY -10 T =1 00℃ a IC COLLECTOR CURRENT -300 -0.1 -50 -1 100 COMMON EMITTER VCE=-20V COMMON EMITTER VCE= -10V Ta=25℃ -0.1 -0 -300 -600 -900 10 -0.1 -1200 -1 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) (pF) —— IC -100 (mA) Ta 875 Ta=25 ℃ C 10 PC 1000 f=1MHz IE=0/IC=0 Cib -10 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) CAPACITANCE -300 (mA) Cob 750 625 500 375 250 125 1 -0.1 -1 REVERSE VOLTAGE www.cj-elec.com -10 V 0 -20 0 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 150 (℃ ) F,May,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.700 4.300 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.146 0.130 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 F,May,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 F,May,2015