B772S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B772S TRANSISTOR (PNP) TO-92 FEATURES Low speed switching 1. EMITTER 2. COLLECTOR 3 BASE Equivalent Circuit  B772 B772 'HYLFHFRGH  6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH Z LIQRQHWKHQRUPDOGHYLFH z  Z=Rank of h FE ;;; &RGH 1 ORDERING INFORMATION Part Number Package Packing Method Pack Quantity B772S 72 %XON 1000pcs/Bag B772S7$ 72 7DSH 2000pcs/Box MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.625 W R ӨJA Thermal Resistance, junction to Ambient 200 ℃ /W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ www.cj-elec.com 1 E,Aug,2017  Ta =25 Я unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA ,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA,IC=0 -6 V Collector cut-off current ICBO VCB= -40V, IE=0 -1 μA Collector cut-off current ICEO VCE=-30V, IB=0 -10 μA Emitter cut-off current IEBO VEB=-6V, IC=0 -1 μA DC current gain hFE VCE= -2V, IC= -1A Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V Transition frequency 60 VCE= -5V, IC=-0.1A fT 50 f =10MHz 400 80 MHz CLASSIFICATION OF hFE Rank R O Y GR Range 60-120 100-200 160-320 200-400 www.cj-elec.com E,Aug,2017 Typical Characteristics Static Characteristic (A) IC COLLECTOR CURRENT COMMON EMITTER Ta=25 ℃ —— -5mA -1.2 -4mA -3mA -0.8 IC Ta=100℃ hFE -10mA -9mA -8mA -7mA -6mA -1.6 hFE 1000 Ta=25℃ DC CURRENT GAIN -2.0 -2mA 100 IB=-1mA -0.4 COMMON EMITTER VCE= -2V -0.0 -6 VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 —— -100 VCE (V) IC VBEsat —— -2000 Ta=25℃ -10 -3000 -1000 COLLECTOR CURRENT -100 Ta=100 ℃ 10 -10 -18 -12 COLLECTOR-EMITTER VOLTAGE BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -0 IC (mA) IC -1000 Ta=25℃ Ta=100 ℃ β=10 β=10 -100 -1 -1 -10 -100 IC COLLECTOR CURREMT IC -3000 —— -1000 -1 -3000 Cob/Cib VBE -3000 (mA) VCB/VEB f=1MHz IE=0/IC=0 Ta=25 ℃ (pF) (mA) T= a 1 00 ℃ C IC -10 -300 Cob 100 CAPACITANCE -100 T= a 25 ℃ COLLECTOR CURRENT IC Cib -0 -600 -900 10 -0.1 -1200 -1 fT —— IC PC 750 COLLECTOR POWER DISSIPATION PC (mW) (MHz) 500 -10 REVERSE VOLTAGE REVERSE VOLTAGE VBE (mV) fT —— -1000 500 -1 TRANSITION FREQUENCY -100 COLLECTOR CURREMT (mA) COMMON EMITTER VCE= -2V -1000 -10 100 10 VCE=-5V —— V -20 (V) Ta 625 500 375 250 125 o 1 Ta=25 C -5 -10 COLLECTOR CURRENT www.cj-elec.com 0 -100 IC 0 25 50 75 AMBIENT TEMPERATURE (mA) 3 100 Ta 125 150 (℃ ) E,Aug,2017 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.700 3.300 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 4 E,Aug,2017 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP 5 E,Aug,2017