BAS116

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS116 SWITCHING DIODE SOT-23 FEATURES z Low leakage current applications z Medium speed switching times MARKING: JV 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM Limit Unit 75 V DC Blocking Voltage VR Forward Continuous Current IFM 200 mA Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A Power Dissipation PD 225 mW Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Electrical Characteristics @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Diode capacitance Reverse recovery time www.cj-elec.com Symbol V (BR) Min Typ Max 75 Unit V Conditions IR=100μA VF1 0.9 V IF=1mA VF2 1 V IF=10mA VF3 1.1 V IF=50mA VF4 1.25 V IF=150mA IR 5 nA VR=75V pF VR=0V,f=1MHz 2 Ctot trr 3 1 μs IF=IR=10mA,Irr=0.1×IR , RL=100Ω B,Oct,2014 Typical Characteristics Forward Characteristics Reverse Characteristics 0.8 200 REVERSE CURRENT IR 10 1 0.4 Ta=100 ℃ 0.6 T= a 2 5℃ =1 00 ℃ a T FORWARD CURRENT IF (nA) (mA) 100 Ta=25 ℃ 0.4 0.2 0.6 0.8 FORWARD VOLTAGE 1.0 VF 0 1.2 15 (V) 30 45 REVERSE VOLTAGE Capacitance Characteristics 60 VR 75 (V) Power Derating Curve 300 2.5 Ta=25℃ 225 PD (mW) 2.0 1.5 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 1.0 0.5 0.0 150 75 0 0 5 10 REVERSE VOLTAGE www.cj-elec.com 15 VR 20 0 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 150 (℃) B,Oct,2014    Symbol A A1 A2 b c D E1 E e e1 L  Dimensions In Millimeters Max. Min. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° -3L     3 B,Oct,2014     4 B,Oct,2014