BAS20

BAS20

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    SOT-23

  • 描述:

    SOT-23塑料封装二极管

  • 详情介绍
  • 数据手册
  • 价格&库存
BAS20 数据手册
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS19/BAS20 SWITCHING DIODE SOT-23 FEATURE  Fast Switching Speed  Surface Mount Package Ideally Suited for Automatic Insertion  For General Purpose Switching Applications  High Conductance MARKING: BAS19:JP BAS20:JR JP JR Solid dot = Green molding compound device, if none,the normal device. JR JP MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter BAS19 BAS20 Unit 200 V VRRM Repetitive Peak Reverse Voltage 120 VRWM Working Peak Reverse Voltage 100 150 V Average Rectified Output Current 200 mA Non-Repetitive Peak Forward Surge Current @t= 8.3ms 2.5 A Power Dissipation 250 mW Thermal Resistance from Junction to Ambient 500 ℃/W TJ Junction temperature 150 ℃ Tstg Storage Temperature -55 ~ +150 ℃ IO IFSM Pd RθJA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Reverse breakdown voltage Symbol BAS19 BAS20 Reverse current BAS19 BAS20 Forward voltage Test V(BR) Condition IR=100μA VR=100V IR Typ Max 120 Unit V 200 0.1 μA IF=100mA 1 V IF=200mA 1.25 V VR=150V VF Min Diodes capacitance CD VR=0V, f=1MHz 5 pF Reveres recovery time trr IF=IR=30mA,Irr=0.1*IR 50 ns www.cj-elec.com 1 C,Mar,2016 Typical Characteristics Forward 1000 Characteristics Reverse 1000 (nA) REVERSE CURRENT IR o T= a 2 5 FORWARD CURRENT 10 C T= a 1 00 o C 100 1 0.1 0.01 0.0 0.4 0.8 1.2 FORWARD VOLTAGE 1.6 VF o Ta=100 C 100 10 o Ta=25 C 1 2.0 0 40 (V) 80 160 120 REVERSE VOLTAGE Capacitance Characteristics 1.6 Characteristics Pulsed IF (mA) Pulsed VR 200 (V) Power Derating Curve 300 1.2 1.0 0.8 0.6 (mW) 1.4 250 PD f=1MHz 200 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 0 4 8 REVERSE VOLTAGE www.cj-elec.com 16 12 VR 150 100 50 0 20 0 25 50 75 100 AMBIENT TEMPERATURE (V) 2 125 Ta 150 (℃) C,Mar,2016   Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8°       3 C,Mar,2016     4 C,Mar,2016
BAS20
PDF文档中包含了以下信息:

1. 物料型号:BAS20 2. 器件简介:BAS20是一款PNP硅外延平面功率三极管,具有高电流增益和低饱和电压特性,适用于高速开关和低噪声放大应用。

3. 引脚分配:引脚1为发射极,引脚2为基极,引脚3为集电极。

4. 参数特性:包括最大集电极电流ICM、集电极-发射极击穿电压BVCEO、最大集电极功耗Ptot等。

5. 功能详解:BAS20在高速开关和低噪声放大方面表现出色,适用于音频放大器、开关电源、马达驱动等应用。

6. 应用信息:推荐用于高速开关和低噪声放大,特别是在要求快速响应和低噪声的环境中。

7. 封装信息:提供SOT-23和SOT-89两种封装形式。
BAS20 价格&库存

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BAS20
    •  国内价格
    • 50+0.11775
    • 200+0.11025
    • 600+0.10275
    • 2000+0.09525
    • 5000+0.08775
    • 10000+0.08250

    库存:880