BAS316

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAS316 SOD-323 SWITCHING DIODE FEATURES  Very Small Plastic Package  High Switching Speed APPLICATIONS  High-Speed Switching in e.g. Surface Mounted Circuits MARKING: A6· MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit Peak Repetitive Reverse Voltage 85 VR DC Blocking Voltage 75 IO Continuous Forward Current 250 mA PD Power Dissipation 250 mW Thermal Resistance from Junction to Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ VRRM RθJA V ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage Symbol V(BR) Reverse current IR Forward voltage Total capacitance Reverse recovery time VF Ctot trr Test conditions Max Unit V VR=25V 30 nA VR=75V 1 μA IF=1mA 0.715 IF=10mA 0.855 IF=50mA 1 IF=150mA 1.25 VR=0V,f=1MHz 1.5 pF 4 ns IR=100μA IF= IR=10mA, Irr=0.1×IR Min 100 Typ V B,Nov,2012 BAS316 Typical Characteristics Forward Characteristics Reverse 10000 250 Characteristics (mA) 100 Ta=100℃ (nA) 1000 REVERSE CURRENT IR T= a 2 5℃ FORWARD CURRENT IF T= a 1 00 ℃ 10 1 0.1 0.01 0.0 Ta=25℃ 10 1 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 1.2 0 20 (V) 40 REVERSE VOLTAGE Capacitance Characteristics 1.1 100 60 VR 80 (V) Power Derating Curve 300 Ta=25℃ f=1MHz (mW) PD 1.0 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 250 0.9 200 150 100 50 0.8 0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,Nov,2012