BAS40-05

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 BAS40/-04/-05/-06 SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage z Fast Switching BAS40 MARKING: 43• BAS40-06 MARKING: 46 BAS40-05 MARKING：45 BAS40-04 MARKING：44 Maximum Ratings @Ta=25℃ Parameter Symbol Peak repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM DC blocking voltage VR Limit Unit 40 V Forward continuous current IFM 200 mA Power dissipation PD 200 mW RθJA 500 ℃/W TJ 125 ℃ Thermal resistance junction to ambient Junction temperature Storage temperature range ℃ -55~+150 TSTG ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time Symbol Test V(BR) IR= 10μA IR VR=30V 200 IF=1mA 380 IF=40mA 1000 VF CD t rr conditions VR=0,f=1MHz Irr=1mA, IR=IF=10mA RL=100Ω Min Max 40 Unit V nA mV 5 pF 5 ns C,Jul,2012 Typical Characteristics BAS40/-04/-05/-06 Forward Characteristics Reverse 100 Characteristics 100 Ta=100℃ (uA) Ta=100℃ REVERSE CURRENT IR FORWARD CURRENT IF (mA) 10 10 Ta=25℃ 1 1 0.1 Ta=25℃ 0.01 0.1 0.0 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 1E-3 1.0 10 20 REVERSE VOLTAGE Capacitance Characteristics 4.0 0 VF (V) 30 VR 40 (V) Power Derating Curve 0.25 3.5 (W) 0.20 PD 3.0 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ f=1MHz 2.5 2.0 1.5 1.0 0 5 10 15 REVERSE VOLTAGE 20 VR 25 (V) 30 0.15 0.10 0.05 0.00 0 25 50 75 AMBIENT TEMPERATURE 100 TJ 125 (℃ ) C,Jul,2012