BAS40WS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAS40WS SCHOTTKY BARRIER DIODE FEATURES z Low Turn-on Voltage z Designed for Surface Mount Application z z z SOD-323 PN Junction Guard for Transient and ESD Protection Fast Switching Plastic Material –UL Recognition Flammability Classification 94V-O MARKING: 43 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter Symbo Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM Limit Unit 40 V DC Blocking V oltage VR Forward Continuous Current IF 200 mA IFSM 600 mA Pd 200 mW Thermal Resistance Junction to Ambient RθJA 500 ℃/W Junction temperature TJ 125 ℃ Storage Temperature TSTG Non-repetitive Peak Forward Surge Current@t=8.3ms Power Dissipation -55 ~ +150 ℃ Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Symbol V (BR) Min Typ Max 40 Unit Conditions V IR=10μA VF1 0.38 V IF=1mA VF2 0.5 V IF=10mA VF3 1 V IF=40mA Reverse current IR 20 200 nA VR=30V Capacitance between terminals CT 4 5 pF VR=0V,f=1MHz Reverse recovery time trr 5 ns www.cj-elec.com 1 IF=IR=10mA Irr=0.1XIR,RL=100Ω D,Mar,2015 Typical Characteristics Forward Characteristics Reverse 100 Characteristics 10000 Ta=100℃ 1000 Ta =2 5℃ Ta =1 00 ℃ FORWARD CURRENT 10 REVERSE CURRENT IR (nA) 30 IF (mA) 3000 3 300 100 Ta=25℃ 30 10 3 1 0.0 1 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 0 10 (V) 20 REVERSE VOLTAGE 30 VR 40 (V) Power Derating Curve Capacitance Characteristics 4 300 Ta=25℃ f=1MHz (mW) PD POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 250 3 2 1 200 150 100 50 0 0 0 5 10 REVERSE VOLTAGE www.cj-elec.com 15 VR 20 0 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃) D,Mar,2015 SOD-323 Package Outline Dimensions SOD-323 Suggested Pad Layout www.cj-elec.com 3 D,Mar,2015 SOD-323 Tape and Reel www.cj-elec.com 4 D,Mar,2015