JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
BAT54X
SOD-523
Schottky Barrier Diode
FEATURES
z Extremely Fast Switching Speed
z Low Forward Voltage
MARKING: JV
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25℃
Symbol
Parameter
Limit
Unit
Non-repetitive peak reverse voltage
VRM
30
V
DC blocking voltage
VR
21
V
Average rectified output current
IO
100
mA
Forward continuous current
IF
200
mA
Repetitive peak forward current
IFRM
300
mA
1RQUHSHWLWLYH3HDNForward surge current
#W PV
IFSM
600
mA
Power dissipation
Pd
150
mW
Thermal resistance junction to ambient
RθJA
667
℃/W
Junction temperature
TJ
125
℃
-55~+150
TSTG
Storage temperature range
℃
Electrical Characteristics @Ta=25℃
Symbol
Conditions
V (BR)
IR=100μA
VF1
IF=0.1mA
240
mV
VF2
IF=1.0mA
320
mV
VF3
IF=10mA
400
mV
VF4
IF=30mA
500
mV
VF5
IF=100mA
1000
mV
Reverse current
IR
VR=25V
2.0
uA
Reverse recovery time
trr
5.0
ns
Capacitance between terminals
CT
Parameter
Reverse breakdown voltage
Forward voltage
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IF=10mA, IR=10mA to 1mA ,
RL=100Ω
VR=1V,f=1MHz
1
Min
Typ
Max
30
Unit
V
10
pF
F,Mar,2015
Typical Characteristics
Forward Characteristics
300
Reverse Characteristics
1000
100
Ta=100℃
REVERSE CURRENT IR
T
IF
a
(uA)
=1
00
℃
(mA)
100
T =2
a
5℃
FORWARD CURRENT
10
1
0.1
0
200
400
600
VF
FORWARD VOLTAGE
10
1
0.1
0.01
800
Ta=25℃
0
5
10
(mV)
15
20
REVERSE VOLTAGE
25
30
(V)
Power Derating Curve
Capacitance Characteristics Per Diode
20
VR
200
Ta=25℃
(mW)
150
PD
15
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
f=1MHz
10
5
0
0
4
8
12
REVERSE VOLTAGE
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16
VR
100
50
0
20
(V)
0
25
50
75
AMBIENT TEMPERATURE
2
100
Ta
125
(℃ )
F,Mar,2015
SOD-523 Package Outline Dimensions
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0.350
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0.850
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1.300
1.500
1.700
0.200 REF
0.010
0.070
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0.020
0.031
0.020
0.028
0.010
0.014
0.003
0.006
0.030
0.033
0.043
0.051
0.059
0.067
0.008 REF
0.001
0.003
7° REF
SOD-523 Suggested Pad Layout
www.cj-elec.com
3
F,Mar,2015
SOD-523 Tape and Reel
www.cj-elec.com
4
F,Mar,2015
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