JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAV199
SWITCHING DIODE
SOT-23
FEATURES
z
This Switching Diode has The Following Features:
Low Leakage Current Applications
z
1
Marking: JY
3
2
JY
JY
Solid dot = Green molding compound device,
if none, the normal device
Maximum Ratings @Ta=25℃
Parameter
Symbol
Limit
Unit
Non-Repetitive Peak Reverse Voltage
VRM
70
V
DC Blocking Voltage
VR
70
V
Forward Continuous Current
IFM
500
mA
Average Rectified Output Current
IO
215
mA
Non-Repetitive Peak Forward Surge Current
@t=8.3ms
IFSM
1.0
A
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
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Symbol
Test
V(BR)
IR= 100μA
IR
VF
CD
t rr
conditions
Min
Max
V
70
VR=70V
5
IF=1mA
900
IF=10mA
1000
IF=50mA
1100
IF=150mA
1250
VR=0, f=1MHz
IF = IR=10mA
1
Unit
nA
mV
2
pF
3
μs
B,Oct,2014
Typical Characteristics
Forward
Reverse
Characteristics
(nA)
(mA)
100
IF
Ta=100 ℃
REVERSE CURRENT IR
a
T=
a 2
5℃
=1
00
℃
0.6
T
FORWARD CURRENT
Characteristics
0.8
500
10
1
0.4
Ta=25 ℃
0.4
0.2
0.8
0.6
1.0
FORWARD VOLTAGE
VF
1.2
0
1.4
14
(V)
42
28
REVERSE VOLTAGE
Capacitance Characteristics
56
VR
70
(V)
Power Derating Curve
250
2.5
Ta=25℃
200
PD
(mW)
2.0
150
1.5
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
f=1MHz
1.0
0.5
100
50
0
0.0
0
5
10
REVERSE VOLTAGE
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15
VR
20
0
25
50
75
AMBIENT TEMPERATURE
(V)
2
100
Ta
125
150
(℃)
B,Oct,2014
Symbol
A
A1
A2
b
c
D
E1
E
e
e1
L
Dimensions In Millimeters
Max.
Min.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0°
8°
Dimensions In Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0°
8°
-3L
3 B,Oct,2014
4 B,Oct,2014
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