BC639

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC635 / BC637 / BC639 TO-92 TRANSISTOR (NPN) 1. EMITTER FEATURES High current transistors 2. COLLECTOR  BC635 z 3. BASE BC637 XXX z BC639 XXX z XXX Equivalent Circuit 1 1 1 BC635,BC637,BC639 'HYLFHFRGH  Solid dot=Green molding compound device, if none,the normal device ;;; &RGH ORDERING INFORMATION Part Number Package Packing Method Pack Quantity BC635 TO-92 Bulk 1000pcs/Bag BC635-TA TO-92 Tape 2000pcs/Box BC637 TO-92 Bulk 1000pcs/Bag BC637-TA TO-92 Tape 2000pcs/Box BC639 TO-92 Bulk 1000pcs/Bag BC639-TA TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO Value Parameter BC635 Collector-Emitter Voltage Collector-Emitter Voltage Unit 45 V BC637 60 V BC639 100 V 45 V BC637 60 V BC639 80 V BC635 VEBO Emitter-Base Volt age 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 0.83 W TJ,Tstg Operation Junction and Storage Temperature Range -55~+150 ℃ www.jscj-elec.com 1 Rev. - 2.0  Ta =25 Я unless otherwise specified Parameter Symbol Test conditions IC=10mA, IB=0 Collector-emitter breakdown voltage Min BC635 V(BR)CEO Typ Max Unit 45 V BC637 60 V BC639 80 V Collector cut-off current ICBO VCB= 30 V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IB=0 0.1 μA hFE(1) VCE=2 V, IC= 5mA hFE(2) VCE=2V, IC=150mA DC current gain Collector-emitter saturation voltage 250 BC637-10/BC639-10 63 160 BC637-16/BC639-16 100 250 VCE=2V, IC= 500mA VCE(sat) IC=500mA, IB=50mA VBE Transition frequency fT www.jscj-elec.com 40 hFE(3) Base-emitter voltage 25 BC635 25 VCE=2V, IC=500mA VCE=5V, IC=10mA,f= 50 MHZ 2 100 0.5 V 1 V MHz Rev. - 2.0 Typical Characteristics Static Characteristic VCE= 2V COMMON EMITTER Ta=25℃ 2mA o 1.8mA DC CURRENT GAIN COLLECTOR CURRENT 1.6mA 0.3 1.4mA 1.2mA 0.2 1mA 100 o Ta=25 C 0.8mA 0.1 0.6mA 0.4mA IB=0.2mA 0.0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE 10 1 10 10 COLLECTOR CURRENT (V) VCE VBEsat —— IC 1000 VCEsat —— 200 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=100 C hFE 0.4 hFE —— IC 1000 IC (A) 0.5 800 Ta=25℃ 600 400 Ta=100℃ 100 IC 1000 (mA) IC β=10 150 100 Ta=100℃ Ta=25℃ 50 200 0 0.1 1 10 100 COLLECTOR CURRENT fT —— 1000 COLLECTOR CURRENT IC Cob / Cib 1000 —— IC (mA) VCB / VEB f=1MHz IE=0 / IC=0 o Ta=25 C (pF) 200 C 150 CAPACITANCE TRANSITION FREQUENCY 100 (mA) fT (MHz) 250 IC 0 10 1000 100 100 Cib Cob 10 50 VCE=5V o Ta=25 C 0 0 20 60 40 COLLECTOR CURRENT 80 IC 1 0.1 100 IC——VBE 1000 1 10 REVERSE VOLTAGE (mA) Pc 1200 —— V 20 (V) Ta COLLECTOR POWER DISSIPATION Pc (mW) COLLECTOR CURRENT IC (mA) VCE=2V 100 o Ta=25℃ Ta=100 C 10 1 1000 800 600 400 200 0.1 200 0 400 600 BASE-EMITTER VOLTAGE www.jscj-elec.com 800 1000 0 25 50 75 AMBIENT TEMPERATURE VBE(mV) 3 100 Ta 125 150 (℃ ) Rev. - 2.0 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 TO-92 7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0