BC807-40

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC807 TRANSISTOR (PNP) SOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction Complementary NPN type available(BC817) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value -50 Unit V Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ VCBO Collector-Base Voltage VCEO ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter T est conditions Min Max Unit Collector-base breakdown voltage VCBO IC= -10μA, IE=0 -50 V Collector-emitter breakdown voltage VCEO IC== -10mA, IB 0 -45 V Emitter-base breakdown voltage VEBO IE= -1μA, IC=0 -5 V Collector cut-off current ICBO V = CB= -45V, IE 0 -0.1 μA Collector cut-off current ICEO V = CE= -40V, IB 0 -0.2 μA Emitter cut-off current IEBO V= EB= -4 V, IC 0 -0.1 μA hFE(1) VCE= -1V, IC= -100mA 100 hFE(2) VCE= -1V, IC= -500mA 40 DC current gain 600 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.7 V Base-emitter saturation voltage VBE(sat) IC= -500mA, IB= -50mA -1.2 V fT Transition frequency VCE= -5V, IC= -10mA f=100MHz 100 MHz CLASSIFICATION OF hFE (1) Rank BC807-16 BC807-25 BC807-40 Range 100-250 160-400 250-600 Marking 5A 5B 5C D,Aug,2013 Typical Characteristics Static Characteristic - 200 o hFE -0.7mA -0.6mA - 160 -0.5mA - 120 -0.4mA -0.3mA - 80 Ta=100 C - 400 DC CURRENT GAIN COLLECTOR CURRENT hFE —— IC - 500 -1mA COMMON -0.9mA EMITTER Ta=25℃ -0.8mA - 240 IC (mA) - 280 BC807 - 300 o Ta=25 C - 200 -0.2mA - 40 VCE= -1V IB=-0.1mA 0 0 - 2 - 6 - 10 - 8 - 4 COLLECTOR-EMITTER VOLTAGE - 12 - 14 VCE (V) - 16 VBEsat —— IC -1.2 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -1.0 -0.8 - 10 COLLECTOR CURRENT VCEsat —— -0.4 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) - 100 - 1 Ta=25℃ -0.6 Ta=100℃ IC - 100 (mA) - 500 IC β=10 -0.3 -0.2 Ta=100℃ -0.1 -0.4 Ta=25℃ -0.2 -0.1 -1 -10 COLLECTOR CURRENT IC —— -100 IC -0.0 -0.1 - 500 -1 (mA) -10 -100 COLLECTOR CURRENT VBE -1000 Cob / Cib 100 —— IC VCB / VEB f=1MHz IE=0 / IC=0 o Ta=25 C (pF) IC (mA) 50 Cib COLLECTOR CURRENT C -100 o CAPACITANCE Ta=100 C -10 Ta=25℃ - 500 (mA) 10 Cob -1 VCE=-1V -0.1 - 0.3 - 0.4 - 0.5 - 0.7 - 0.8 - 0.6 BASE-EMITTER VOLTAGE VBE(V) —— - 5 REVERSE VOLTAGE 0 IC Pc 0.4 (MHz) 100 TRANSITION FREQUENCY fT 1 - 1.0 COLLECTOR POWER DISSIPATION Pc (W) fT 300 - 0.9 —— - 10 V (V) Ta 0.3 0.2 0.1 VCE=-5V o Ta=25 C 10 -1 - 60 - 10 COLLECTOR CURRENT IC (mA) 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) D,Aug,2013