BC857A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A, B BC857A, B,C BC858A, B,C TRANSISTOR (PNP) SOT-23 FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Value Collector-Base Voltage BC856 BC857 BC858 -80 -50 Unit V -30 Collector-Emitter Voltage BC856 BC857 BC858 -65 -45 V -30 VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -0.1 A PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65-150 ℃ DEVICE MARKING BC856A=3A; BC856B=3B; BC857A=3E;BC857B=3F;BC857C=3G; BC858A=3J; BC858B=3K; BC858C=3L B,Jan,2014 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage VCBO IC= -10μA, IE=0 -30 BC856 -65 VCEO IC= -10mA, IB=0 VEBO Collector cut-off current ICBO BC856 VCE= -60 V , IB=0 ICEO -5 VCE= -40 V , IB=0 VEB= -5 V , IC=0 BC856A, 857A,858A BC856B, 857B,858B V V -0.1 μA -0.1 μA -0.1 μA VCE= -25 V , IB=0 IEBO Emitter cut-off current -45 VCB= -45 V , IE=0 VCB= -25 V , IE=0 BC858 DC current gain IE= -1μA, IC=0 BC858 BC857 V VCB= -70 V , IE=0 BC856 BC857 Unit -30 BC858 Emitter-base breakdown voltage Max -50 BC858 BC857 Collector cut-off current Min -80 BC856 BC857 Collector-emitter breakdown voltage Test conditions hFE VCE= -5V,IC= -2mA BC857C,BC858C 125 250 220 475 420 800 Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB= -5 mA -0.5 V Base-emitter saturation voltage VBE(sat) IC= -100mA, IB= -5mA -1.1 V Transition frequency fT Collector capacitance Cob VCE= -5 V, IC= -10mA f=100MHz VCB=-10V, f=1MHz 100 MHz 4.5 pF B,Jan,2014 Typical Characteristics BC856/BC857/BC858 Static Characteristic -4.0 COMMON EMITTER Ta=25℃ -10uA -9.0uA IC -3.0 DC CURRENT GAIN -7.0uA -6.0uA -2.0 -5.0uA -1.5 IC COMMON EMITTER VCE= -5V Ta=100℃ -8.0uA -2.5 —— hFE (mA) -3.5 COLLECTOR CURRENT hFE 600 -4.0uA 400 Ta=25℃ 200 -3.0uA -1.0 -2.0uA -0.5 IB=-1.0uA -0.0 -0 -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE VCEsat —— -1 -10 COLLECTOR CURRENT (V) IC VBEsat —— -1000 -100 IC (mA) IC -800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 VCE 0 -0.1 -12 Ta=100 ℃ -100 Ta=25℃ Ta=25℃ -600 Ta=100 ℃ -400 β=20 β=20 -10 -0.1 -1 -10 COLLECTOR CURREMT IC -100 —— IC -200 -0.1 -100 -1 -10 COLLECTOR CURREMT (mA) VBE Cob/Cib 100 —— IC -100 (mA) VCB/VEB f=1MHz IE=0/IC=0 (pF) T= a 25 ℃ CAPACITANCE C -10 T= a 1 00 ℃ COLLECTOR CURRENT IC (mA) Ta=25 ℃ -1 Cib 10 Cob COMMON EMITTER VCE= -5V 1 -0.1 -0.1 -0 -300 -600 -900 -1200 -1 fT —— IC COLLECTOR POWER DISSIPATION PC (mW) fT TRANSITION FREQUENCY PC 250 (MHz) 300 200 100 VCE=-5V -10 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) —— V -20 (V) Ta 200 150 100 50 o Ta=25 C 0 0 -0 -4 -8 -12 COLLECTOR CURRENT -16 IC (mA) -20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 B,Jan,2014