JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
BC856A, B
BC857A, B,C
BC858A, B,C
TRANSISTOR
(PNP)
SOT-23
FEATURES
y
Ideally suited for automatic insertion
y
For Switching and AF Amplifier Applications
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
Parameter
Value
Collector-Base Voltage
BC856
BC857
BC858
-80
-50
Unit
V
-30
Collector-Emitter Voltage
BC856
BC857
BC858
-65
-45
V
-30
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current –Continuous
-0.1
A
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65-150
℃
DEVICE MARKING
BC856A=3A; BC856B=3B;
BC857A=3E;BC857B=3F;BC857C=3G;
BC858A=3J; BC858B=3K; BC858C=3L
B,Jan,2014
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Collector-base breakdown voltage
VCBO
IC= -10μA, IE=0
-30
BC856
-65
VCEO
IC= -10mA, IB=0
VEBO
Collector cut-off current
ICBO
BC856
VCE= -60 V , IB=0
ICEO
-5
VCE= -40 V , IB=0
VEB= -5 V , IC=0
BC856A, 857A,858A
BC856B, 857B,858B
V
V
-0.1
μA
-0.1
μA
-0.1
μA
VCE= -25 V , IB=0
IEBO
Emitter cut-off current
-45
VCB= -45 V , IE=0
VCB= -25 V , IE=0
BC858
DC current gain
IE= -1μA, IC=0
BC858
BC857
V
VCB= -70 V , IE=0
BC856
BC857
Unit
-30
BC858
Emitter-base breakdown voltage
Max
-50
BC858
BC857
Collector cut-off current
Min
-80
BC856
BC857
Collector-emitter breakdown voltage
Test conditions
hFE
VCE= -5V,IC= -2mA
BC857C,BC858C
125
250
220
475
420
800
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA,IB= -5 mA
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= -100mA, IB= -5mA
-1.1
V
Transition frequency
fT
Collector capacitance
Cob
VCE= -5 V, IC= -10mA
f=100MHz
VCB=-10V, f=1MHz
100
MHz
4.5
pF
B,Jan,2014
Typical Characteristics
BC856/BC857/BC858
Static Characteristic
-4.0
COMMON
EMITTER
Ta=25℃
-10uA
-9.0uA
IC
-3.0
DC CURRENT GAIN
-7.0uA
-6.0uA
-2.0
-5.0uA
-1.5
IC
COMMON EMITTER
VCE= -5V
Ta=100℃
-8.0uA
-2.5
——
hFE
(mA)
-3.5
COLLECTOR CURRENT
hFE
600
-4.0uA
400
Ta=25℃
200
-3.0uA
-1.0
-2.0uA
-0.5
IB=-1.0uA
-0.0
-0
-2
-4
-6
-8
-10
COLLECTOR-EMITTER VOLTAGE
VCEsat
——
-1
-10
COLLECTOR CURRENT
(V)
IC
VBEsat ——
-1000
-100
IC
(mA)
IC
-800
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
-1000
VCE
0
-0.1
-12
Ta=100 ℃
-100
Ta=25℃
Ta=25℃
-600
Ta=100 ℃
-400
β=20
β=20
-10
-0.1
-1
-10
COLLECTOR CURREMT
IC
-100
——
IC
-200
-0.1
-100
-1
-10
COLLECTOR CURREMT
(mA)
VBE
Cob/Cib
100
——
IC
-100
(mA)
VCB/VEB
f=1MHz
IE=0/IC=0
(pF)
T=
a 25
℃
CAPACITANCE
C
-10
T=
a 1
00
℃
COLLECTOR CURRENT
IC
(mA)
Ta=25 ℃
-1
Cib
10
Cob
COMMON EMITTER
VCE= -5V
1
-0.1
-0.1
-0
-300
-600
-900
-1200
-1
fT
——
IC
COLLECTOR POWER DISSIPATION
PC (mW)
fT
TRANSITION FREQUENCY
PC
250
(MHz)
300
200
100
VCE=-5V
-10
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (mV)
——
V
-20
(V)
Ta
200
150
100
50
o
Ta=25 C
0
0
-0
-4
-8
-12
COLLECTOR CURRENT
-16
IC
(mA)
-20
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
B,Jan,2014
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