BCW66

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T BCW66 SOT-23 TRANSISTOR (NPN) FEATURES Complementary to BCW68 1. BASE 2. EMITTER 3. COLLECTOR BCW66 is subdivided into three groups F,G and H according to DC current gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max IC= 10μA, IE=0 75 V V(BR)CEO IC= 10mA, IB=0 45 V 5 Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)EBO IE=10μA, IC=0 Collector cut-off current ICBO VCB=45 V, IE=0 0.02 Collector cut-off current IEBO VEB=4 V, IC=0 0.02 Emitter-base breakdown voltage Unit hFE1 hFE2 DC current gain hFE3 hFE4 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency Output capacitance Input capacitance Noise figure VCE=10V, IC=0. 1mA BCW66F BCW66G BCW66H VCE=1V, IC= 10mA BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H VCE=1V, IC=100mA VCE=2V, IC=500mA 35 50 80 75 110 180 100 160 250 35 60 100 V μA μA 250 400 630 IC=100mA, IB=10mA 0.3 V IC=500mA, IB=50mA 0.7 V IC=500mA, IB=50mA 2 V VCE=10V,IC=20mA,f=100MHz fT Cob Cib VCB=10V,IE=0,f=1MHz 12 pF VEB=0.5V,IE=0,f=1MHz 80 pF NF VCE=5V,IC=0.2mA,f=1KHz, Rs=1KΩ,BW=200Hz 10 dB 100 MHz MARKING Rank Range Marking www.cj-elec.com F 100-250 EF G H 160-400 EG 250-630 EH 1 D,Oct,2014 A,Jun,2014 Typical Characteristics Static Characteristic 720uA 640uA 800uA VCE= 1V COMMON EMITTER Ta=25℃ hFE 250 560uA 480uA 200 hFE —— IC 500 DC CURRENT GAIN COLLECTOR CURRENT IC (mA) 300 400uA 150 320uA 240uA 100 160uA o Ta=100 C 400 300 o Ta=25 C 200 100 50 IB=80uA 0 0 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE VCE 7 0 0.1 8 VBEsat —— IC 1.2 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 1.0 Ta=25℃ 0.6 0.4 Ta=100℃ 10 COLLECTOR CURRENT VCEsat —— 400 β=10 0.8 1 (V) IC 100 800 (mA) IC β=10 300 200 Ta=100℃ 100 0.2 Ta=25℃ 0.0 0.1 1 10 100 COLLECTOR CURRENT fT —— (mA) IC 100 10 Cob / Cib —— 800 100 IC (mA) VCB / VEB 180 f=1MHz IE=0 / IC=0 160 Ta=25 C (pF) o C 140 120 100 80 60 Cib 10 Cob 40 VCE=10V 20 o Ta=25 C 0 1 10 Pc 0.3 —— 1 0.1 100 COLLECTOR CURRENT COLLECTOR POWER DISSIPATION Pc (W) 1 COLLECTOR CURRENT CAPACITANCE TRANSITION FREQUENCY fT (MHz) 200 IC 0 0.1 800 IC 1 REVERSE VOLTAGE (mA) 10 V 20 (V) Ta 0.2 0.1 0.0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 D,Oct,2014 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 6° SOT-23 Suggested Pad Layout www.cj-elec.com 3 D,Oct,2014 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 4 D,Oct,2014 A,Jun,2014