BCX55-16

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BCX54,BCX55,BCX56 TRANSISTOR (NPN) 1. BASE FEATURES z PNP Complements to BCX51,BCX52,BCX53 z Low Voltage z High Current 2. COLLECTOR 3. EMITTER APPLICATIONS z Driver Stages of Audio Amplifiers MARKING:BCX54:BA, BCX54-10:BC, BCX54-16:BD BCX55:BE, BCX55-10:BG, BCX55-16BM BCX56:B H, BCX56-10:BK, BCX56-16:BL MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO Parameter Collector-Base Voltage Collector-Emitter Voltage Value BCX54 45 BCX55 60 BCX56 100 BCX54 45 BCX55 60 BCX56 80 Unit V V Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA C,Apr,2012 * Pulse Test Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CEO* T est conditions IC=100µA,IE=0 IC=10mA,IB=0 V(BR)EBO IE=100µA,IC=0 ICBO VCB=30V,IE=0 Collector cut-off current Emitter cut-off current Min BCX54 45 BCX55 60 BCX56 100 BCX54 45 BCX55 60 BCX56 80 Typ Max Unit V V 5 V 0.1 µA 0.1 µA IEBO VEB=5V,IC=0 hFE(1)* VCE=2V, IC=5mA 40 hFE(2)* VCE=2V, IC=150mA 63 hFE(3)* VCE=2V, IC=0.5A 25 VCE(sat)* IC=0.5A,IB=50mA 0.5 V Base -emitter voltage VBE* VCE=2V, IC=0.5A 1 V Transition frequency fT DC current gain Collector-emitter saturation voltage VCE=5V,IC=10mA, f=100MHz 250 130 MHz CLASSIFICATION OF hFE(2) BCX54 BCX54-10 BCX54-16 RANK BCX55 BCX55-10 BCX55-16 BCX56 BCX56-10 BCX56-16 RANGE 63–250 63–160 100–250 C,Apr,2012 Typical Characteristics Static Characteristic (mA) 250 hFE IC —— IC COMMON EMITTER VCE=2V COMMON EMITTER Ta=25℃ 0.9mA DC CURRENT GAIN 0.8mA 150 hFE 1000 1.0mA 200 COLLECTOR CURRENT BCX54,BCX55,BCX56 0.7mA 0.6mA 100 0.5mA 0.4mA 0.3mA 50 Ta=100℃ 300 Ta=25℃ 100 30 0.2mA IB=0.1mA 0 10 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 —— VCE 5 1 IC VBEsat 1.0 BASE-EMMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) 300 100 Ta=100℃ Ta=25℃ 30 —— 1000 (mA) IC 0.8 Ta=25℃ Ta=100℃ 0.6 0.4 1 10 100 COLLECTOR CURRENT IC 1000 —— IC 1000 1 (mA) 10 (mA) 100 COLLECTOR CURRENT VBE Cob/ Cib 300 COMMON EMITTER VCE=2V —— IC 1000 (mA) VCB/ VEB f=1MHz IE=0/IC=0 Cib 100 Ta=25℃ (pF) Ta=100℃ C 100 Ta=25℃ 10 1 0.2 0.4 0.6 0.8 BASE-EMITTER VOLTAGE fT —— VBE Cob 10 1 0.1 1.0 1 0.3 (V) IC PC 600 COLLECTOR POWER DISSIPATION PC (mW) fT 100 COMMON EMITTER VCE=5V 10 3 REVERSE BIAS VOLTAGE (MHz) 500 CAPACITANCE IC IC β=10 10 COLLECTOR CURRENT 100 COLLECTOR CURRENT β=10 TRANSITION FREQUENCY 10 (V) —— V 20 (V) Ta 500 400 300 200 100 Ta=25℃ 10 10 100 30 COLLECTOR CURRENT IC (mA) 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 C,Apr,2012