BD135

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135 / BD137 / BD139 TRANSISTOR (NPN) FEATURES z High Current z Complement To BD136, BD138 And BD140 TO – 126 1. EMITTER 2. COLLECTOR 3. BASE  Equivalent Circuit BD137 zXX BD135 zXX BD139 zXX BD135,BD137,BD139 'HYLFHFoGH Solid dot = Green molding compound device, if none, the normal device ;; &ode  ORDERING INFORMATION Part Number Package Packing Method Pack Quantity BD135 TO-126 Bulk 200pcs/Bag BD137 TO-126 Bulk 200pcs/Bag BD139 TO-126 Bulk 200pcs/Bag BD135-TU TO-126 Tube 60pcs/Tube BD137-TU TO-126 Tube 60pcs/Tube BD139-TU TO-126 Tube 60pcs/Tube MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO Parameter Value Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage BD135 45 BD137 60 BD139 80 BD135 45 BD137 60 BD139 80 5 Unit V V V IC Collector Current 1.5 A PC Collector Power Dissipation 1.25 W 100 ℃/W -55~+150 ℃ RθJA TJ,Tstg www.jscj-elec.com Thermal Resistance From Junction To Ambient Operation Junction and Storage Temperature Range 1 Rev. - 2.0  Ta =25 Я unless otherwise specified Parameter Symbol Collector-base breakdown voltage Test V(BR)CBO conditions Min BD135 45 BD137 60 BD139 Collector-emitter sustaining voltage Max Unit V 80 * VCEO(SUS) IC=0.03A,IB=0 BD135 45 BD137 60 BD139 Emitter-base breakdown voltage Typ IC= 0.1mA,IE=0 V 80 5 V(BR)EBO IE=0.1mA,IC=0 Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 10 μA * hFE(1) * hFE(2) * hFE(3) DC current gain Collector-emitter saturation voltage * VCE(sat) VBE Base-emitter voltage * VCE=2V, IC=150mA 40 VCE=2V, IC=5mA 25 VCE=2V, IC=500mA 25 V 250 IC=500mA,IB=50mA 0.5 V VCE=2V, IC=500mA 1 V *Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE(1) RANK 6 10 16 RANGE 40-100 63-160 100-250 www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics Static Characteristic 0.35 COMMON EMITTER Ta=25℃ hFE 350 1.6mA 0.20 1.4mA 1.2mA 0.15 1.0mA 0.8mA 0.10 0.6mA 0.05 1.0 1.5 2.0 2.5 3.0 3.5 VCE 4.0 4.5 1000 1500 VCEsat —— IC (mA) IC 350 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 100 COLLECTOR CURRENT β=10 1000 900 Ta=25℃ 800 700 Ta=100℃ β=10 300 250 200 Ta=100℃ 150 100 Ta=25℃ 50 500 400 10 0 10 1000 1500 100 COLLECTOR CURRENT IC 1000 1500 100 (mA) COLLECTOR CURRENT Pc IC——VBE 1500 —— IC (mA) Ta 1600 COLLECTOR POWER DISSIPATION Pc (mW) VCE=2V IC (mA) COLLECTOR CURRENT 150 (V) 1100 600 o Ta=25 C 200 0 10 5.0 VBEsat —— IC 1200 250 50 IB=0.2mA 0.5 300 100 0.4mA COLLECTOR-EMITTER VOLTAGE 1000 o Ta=100 C 400 1.8mA 0.25 0.00 0.0 VCE= 2V 450 2.0mA DC CURRENT GAIN COLLECTOR CURRENT IC (A) 0.30 hFE —— IC 500 o Ta=100 C Ta=25℃ 100 1400 1200 1000 800 600 400 200 10 0 400 600 BASE-EMITTER VOLTAGE www.jscj-elec.com 800 1000 0 25 50 75 AMBIENT TEMPERATURE VBE(mV) 3 100 Ta 125 150 (℃ ) Rev. - 2.0 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.jscj-elec.com Dimensions In Millimeters Min Max 2.900 2.500 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 4 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 Rev. - 2.0