BD136

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD136 / BD138 / BD140 TRANSISTOR (PNP) TO – 126 FEATURES z High Current z Complement To BD135, BD137 And BD139 1. EMITTER 2. COLLECTOR 3. BASE  Equivalent Circuit BD136 zXX BD138 zXX BD140 zXX BD136,BD138,BD140 'HYLFHFoGH Solid dot = Green molding compound device, if none, the normal device ;; &ode ORDERING INFORMATION Part Number Package Packing Method Pack Quantity BD136 TO-126 Bulk 200pcs/Bag BD138 TO-126 Bulk 200pcs/Bag BD140 TO-126 Bulk 200pcs/Bag BD136-TU TO-126 Tube 60pcs/Tube BD138-TU TO-126 Tube 60pcs/Tube BD140-TU TO-126 Tube 60pcs/Tube MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO Parameter Collector-Base Voltage Collector-Emitter Voltage Value BD136 -45 BD138 -60 BD140 -80 BD136 -45 BD138 -60 BD140 -80 -5 Emitter-Base Voltage Unit V V V IC Collector Current -1.5 A PC Collector Power Dissipation 1.25 W 100 -55~+150 ℃/W RθJA TJ,Tstg www.jscj-elec.com Thermal Resistance From Junction To Ambient Junction Temperature 1 ℃ Rev. - 2.0  Ta =25 Я unless otherwise specified Parameter Symbol Collector-base breakdown voltage Test V(BR)CBO conditions Min -45 BD138 -60 Unit V -80 VCEO(SUS)* IC=-0.03A,IB=0 BD136 -45 BD138 -60 BD140 Emitter-base breakdown voltage Max IC= -0.1mA,IE=0 BD136 BD140 Collector-emitter sustaining voltage Typ V -80 -5 V(BR)EBO IE=-0.1mA,IC=0 Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -10 μA DC current gain Collector-emitter saturation voltage Base-emitter voltage V * hFE(1) hFE(2)* hFE(3)* VCE=-2V, IC=-150mA 40 VCE=-2V, IC=-5mA 25 VCE=-2V, IC=-500mA 25 * VCE(sat) * VBE IC=-500mA,IB=-50mA -0.5 V VCE=-2V, IC=-500mA -1 V 250 *Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE(1) RANK 6 10 16 RANGE 40-100 63-160 100-250 www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics hFE Static Characteristic -180 COMMON EMITTER Ta=25℃ -1mA -150 -0.9mA (mA) hFE -0.8mA -0.7mA -0.6mA -90 -0.5mA -0.4mA -0.3mA -0.2mA -30 COMMON EMITTER VCE=-2V 250 -120 -60 IC Ta=100℃ DC CURRENT GAIN IC COLLECTOR CURRENT —— 300 200 Ta=25℃ 150 100 50 IB=-0.1mA -0 0 -0 -2 -4 COLLECTOR-EMITTER VOLTAGE VCEsat —— -6 VCE -1 IC VBEsat BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -100 Ta=100℃ Ta=25℃ -10 (mA) IC -800 Ta=25℃ Ta=100℃ -400 -0 -1 -10 -100 COLLECTOR CURRENT IC —— IC -1000 -1500 -1 -1000 -10 (mA) -100 COLLECTOR CURRENT Cob/ Cib VBE -1000 -1500 IC (mA) VCB/ VEB —— 1000 -1500 COMMON EMITTER VCE=-2V f=1MHz IE=0/IC=0 Ta=25℃ (pF) (mA) Ta=100℃ Ta=25℃ -10 -1 -200 Cib C -100 CAPACITANCE IC IC β=10 -1 -400 -600 -800 100 Cob 10 -0.1 -1000 -1 BASE-EMMITER VOLTAGE VBE (mV) fT —— -10 REVERSE VOLTAGE IC PC 1.50 COLLECTOR POWER DISSIPATION PC (W) 200 100 fT (MHz) —— -1200 β=10 TRANSITION FREQUENCY -1000 -1500 -100 COLLECTOR CURRENT -1000 COLLECTOR CURRENT -10 (V) 30 COMMON EMITTER VCE= -2V —— V -20 (V) Ta 1.25 1.00 0.75 0.50 0.25 Ta=25℃ 10 -10 0.00 COLLECTOR CURRENT www.jscj-elec.com -100 -30 IC 0 (mA) 25 50 75 AMBIENT TEMPERATURE 3 100 Ta 125 150 (℃ ) Rev. - 2.0 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.jscj-elec.com Dimensions In Millimeters Min Max 2.900 2.500 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 4 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 Rev. - 2.0