BD238

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD234 / BD236 / BD238 TRANSISTOR (PNP) TO-126 FEATURES Complement to BD233/BD235/BD237 respectively 1. EMITTER 2. COLLECTOR 3. BASE  Equivalent Circuit BD234 zXX BD236 zXX BD238 zXX BD234,BD236,BD238 'HYLFHFoGH Solid dot = Green molding compound device, if none, the normal device ;; &ode  ORDERING INFORMATION Part Number Package Packing Method Pack Quantity BD234 TO-126 Bulk 200pcs/Bag BD236 TO-126 Bulk 200pcs/Bag BD238 TO-126 Bulk 200pcs/Bag BD234-TU TO-126 Tube 60pcs/Tube BD236-TU TO-126 Tube 60pcs/Tube BD238-TU TO-126 Tube 60pcs/Tube MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current –Continuous PC Collector Dissipation PC Collector Dissipation (Tc=25 ℃ ) RΘJA Thermal Resistance from Junction to Ambient RΘJC Thermal Resistance from Junction to Case TJ,Tstg www.jscj-elec.com Value BD234 BD236 BD238 BD234 BD236 BD238 Operation Junction and Storage Temperature Range 1 Unit -45 -60 -100 -45 -60 -80 -5 V -2 A 1.25 W V V 25 W 100 ℃/W 5 ℃/W -55~+150 ℃ Rev. - 2.0  Ta =25 Я unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol BD234 BD236 BD238 BD234 BD236 BD238 Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current BD234 BD236 BD238 Test conditions V(BR)CBO IC=-1mA,IE=0 V(BR)CEO IC=-100mA,IB=0 V(BR)EBO IE=-1mA,IC=0 Min Max -45 -60 -100 -45 -60 -80 V V -5 ICBO VCB=-45V, IE=0 VCB=-60V, IE=0 VCB=-100V, IE=0 IEBO VEB=-5V, IC=0 hFE(1) VCE=-2V, IC=-150mA 40 hFE(2) VCE=-2V, IC=-1A 25 Unit V -100 µA -1 mA -0.6 V DC current gain Collector-emitter saturation voltage Transition frequency www.jscj-elec.com VCE(sat) fT 2 IC=-1A, IB=-100m A VCE=-10V, IC=-250mA, f =10MHz 3 MHz Rev. - 2.0 Typical Characteristics Static Characteristic -0.5 -3.0mA -2.7mA 250 DC CURRENT GAIN -2.4mA IC o Ta=100 C hFE (A) VCE= -2V COMMON EMITTER Ta=25℃ -0.4 -2.1mA COLLECTOR CURRENT hFE —— IC 300 -0.3 -1.8mA -1.5mA -0.2 -1.2mA -0.9mA -0.6mA -0.1 200 150 o Ta=25 C 100 50 IB=-0.3mA -0.0 -0 -1 -2 -3 -4 -5 -6 COLLECTOR-EMITTER VOLTAGE VCE -7 0 -0.01 -8 IC -2 (A) IC -300 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -1 VCEsat —— VBEsat —— IC -1200 -0.1 COLLECTOR CURRENT (V) -1000 Ta=25℃ -800 -600 Ta=100℃ β=10 -200 -100 Ta=100℃ -400 Ta=25℃ -200 -1E-3 -0.01 -0.1 COLLECTOR CURRENT IC —— -1 IC -0 -1E-3 -2 Pc VBE —— -1 IC -2 (A) Ta 1.50 COLLECTOR POWER DISSIPATION Pc (W) IC (A) VCE=-2V o Ta=100 C -0.1 COLLECTOR CURRENT -0.1 COLLECTOR CURRENT -2 -1 -0.01 (A) -0.01 Ta=25℃ -1E-3 1.25 1.00 0.75 0.50 0.25 -1E-4 -200 0.00 -300 -400 -500 -600 -700 BASE-EMITTER VOLTAGE www.jscj-elec.com -800 -900 -1000 0 25 50 75 AMBIENT TEMPERATURE VBE(mV) 3 100 Ta 125 150 (℃ ) Rev. - 2.0 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.jscj-elec.com Dimensions In Millimeters Min Max 2.900 2.500 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 4 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 Rev. - 2.0