BD441

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD439 / BD441 TRANSISTOR (NPN) TO – 126 FEATURES z Amplifier and Switching Applications z Complement To BD440, BD442 1. EMITTER 2. COLLECTOR 3. BASE  Equivalent Circuit BD439 z XXX BD439,BD441 'HYLFHFoGH Solid dot = Green molding compound device, if none, the normal device BD441 zXXX ;;; &ode ORDERING INFORMATION Part Number Package Packing Method Pack Quantity BD439 TO-126 Bulk 200pcs/Bag BD441 TO-126 Bulk 200pcs/Bag BD439-TU TO-126 Tube 60pcs/Tube BD441-TU TO-126 Tube 60pcs/Tube MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Value Collector-Base Voltage BD439 BD441 60 BD439 60 BD441 80 80 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current –Continuous 4 A PC Collector Power Dissipation 1.25 W -55-150 ℃ TJ,Tstg www.jscj-elec.com Operation Junction and Storage Temperature Range 1 V Rev. - 2.0  Ta =25 Я unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol IC=100μA,IE=0 VCEO(SUS)(1) IC=100mA,IB=0 V(BR)EBO IE=100μA,IC=0 ICBO Emitter cut-off current IEBO VCE=5V,IC=10mA fT 80 BD439 60 BD441 80 (1) (1) VCE=1V,IC=2A Typ Max 40 BD439 BD441 20 15 BD439 25 BD441 15 Unit V V V 5 VEB=5V,IE=0 (1) Transition frequency BD441 BD441 hFE(2) VBE 60 BD439 VCE=1V,IC=500mA Base-emitter voltage BD439 VCB=60V,IE =0 hFE(1) VCE(sat) Min VCB=80V,IE=0 (1) hFE(3) (1) Collector-emitter saturation voltage conditions V(BR)CBO Collector cut-off current DC current gain Test 100 μA 1 mA 475 IC=3A,IB=0.3A 0.8 V VCE=1V,IC=2A 1.1 V VCE=1V,IC=250mA 3 MHz (1) Pulse test www.jscj-elec.com 2 Rev. - 2.0 7\SLFDO&KDUDFWHULVWLFV Static Characteristic 1.6 (A) 1.4 9mA IC 6mA 0.8 5mA DC CURRENT GAIN 7mA 1.0 4mA 0.6 Ta=100℃ hFE 8mA 1.2 COLLECTOR CURRENT IC hFE —— 1000 10mA COMMON EMITTER Ta=25℃ 3mA Ta=25℃ 100 0.4 2mA 0.2 COMMON EMITTER VCE=1V IB=1mA 0.0 0 2 1 3 4 5 6 7 8 COLLECTOR-EMITTER VOLTAGE VCE VCEsat —— 9 10 1E-3 10 0.01 0.1 4 1 COLLECTOR CURRENT IC (A) (V) IC VBEsat 1200 500 —— IC BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1100 100 Ta=100℃ Ta=25℃ 1000 Ta=25℃ 900 800 700 Ta=100℃ 600 500 400 300 β=10 10 1E-3 0.01 0.1 1 β=10 200 1E-3 4 0.1 1 IC —— VBE 1000 Cob/ Cib —— VCB/ VEB COMMON EMITTER VCE=1V f=1MHz IE=0/IC=0 Ta=25℃ Cib CAPACITANCE T= a 25 ℃ T= a 10 0℃ COLLCETOR CURRENT IC C (A) (pF) 1 0.1 0 200 400 600 800 BASE-EMMITER VOLTAGE VBE 1000 100 Cob 10 0.1 0.01 1200 1 10 30 REVERSE VOLTAGE V (V) (mV) PC —— Ta 1500 COLLECTOR POWER DISSIPATION PC (mW) 4 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 4 0.01 1250 1000 750 500 250 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta (℃) www.jscj-elec.com 3 Rev. - 2.0 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.jscj-elec.com Dimensions In Millimeters Min Max 2.900 2.500 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 4 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 Rev. - 2.0