BSS138

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS ID RDS(on)MAX SOT-23 3.5Ω@10V 50 V 220mA 6Ω@4.5V   1. GATE 2. SOURCE 3. DRAIN FEATURE z High density cell design for extremely low RDS(on) z Rugged and Relaible APPLICATION z Direct Logic-Level Interface: TTL/CMOS z Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. z Battery Operated Systems z Solid-State Relays MARKING Equivalent Circuit SS=Device code Solid dot = Green molding compound device,if none, the normal device Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 50 Continuous Gate-Source Voltage VGSS ±20 ID 0.22 A Pulsed Drain Current (tp=10us) IDM 0.88 A Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient RθJA 357 ℃/W Operation Junction and Storage Temperature Range Tj,Tstg -55 ~+150 ℃ Continuous Drain Current www.jscj-elec.com 1 V Rev. - 2.1 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Test Condition Symbol Min Typ Max Units Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Gate-body leakage IGSS VDS =0V, VGS =±20V ±100 nA Zero gate voltage drain current IDSS VDS =50V, VGS =0V 0.5 µA VDS =30V, VGS =0V 100 nA 1.50 V 50 V On characteristics Gate-threshold voltage (note 1) VGS(th) Static drain-source on-resistance (note 1) RDS(on) Forward transconductance (note 1) gFS VDS =VGS, ID =1mA 0.80 VGS =10V, ID =0.22A 0.88 3.50 VGS =4.5V, ID =0.22A 1.50 6 VDS =10V, ID =0.22A 0.12 Ω S Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 27 VDS =25V,VGS =0V, f=1MHz pF 13 6 Switching characteristics Turn-on delay time (note 1,2) Rise time (note 1,2) Turn-off delay time (note 1,2) Fall time (note 1,2) td(on) 5 tr VDD=30V, VDS=10V, 18 td(off) ID =0.29A,RGEN=6Ω 36 tf ns 14 Drain-source body diode characteristics Body diode forward voltage (note 1) VSD IS=0.44A, VGS = 0V 1.4 V Notes: 1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. 2. These parameters have no way to verify. www.jscj-elec.com 2 Rev. - 2.1 Typical Characteristics Output Characteristics Transfer Characteristics 2.0 1.2 Ta=25℃ VDS=3V VGS=3V,4V,5V,6V Pulsed Pulsed VGS=10V 1.0 VGS=5V ID VGS=4V DRAIN CURRENT DRAIN CURRENT ID (A) (A) 1.5 1.0 Ta=25℃ 0.8 Ta=100℃ 0.6 0.4 VGS=3V 0.5 0.2 VGS=2V 0.0 0.0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 5 0 (V) 1 2 4 VGS 5 (V) RDS(ON) —— VGS RDS(ON) —— ID 1.5 1.4 3 GATE TO SOURCE VOLTAGE 6 Ta=25℃ Pulsed Pulsed ID=500mA 5 1.3 ( ) ( ) VGS=4.5V RDS(ON) 1.1 ON-RESISTANCE ON-RESISTANCE RDS(ON) 1.2 1.0 0.9 VGS=10V 0.8 4 3 Ta=100℃ 2 0.7 1 0.6 Ta=25℃ 0.5 0 0.2 0.4 0.6 DRAIN CURRENT 0.8 ID 1.0 0 (A) 2 4 6 GATE TO SOURCE VOLTAGE 8 VGS 10 (V) Threshold Voltage IS —— VSD 1 2.0 Ta=100℃ Ta=25℃ 0.01 1E-3 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.5 VTH 0.1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) Pulsed 1.2 ID=250uA 1.0 0.5 0.0 25 1.4 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 Tj 125 (℃ ) Rev. - 2.1 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.1 SOT-23 Tape and Reel 120,000 30,000 www.jscj-elec.com 5 Rev. - 2.1