JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
BSS138:
N-Channel 50-V(D-S) MOSFET
V(BR)DSS
ID
RDS(on)MAX
SOT-23
3
3.5Ω@10V
50 V
220mA
6Ω@4.5V
1. GATE
2. SOURCE
1
2
3. DRAIN
FEATURE
z High density cell design for extremely low RDS(on)
z Rugged and Relaible
APPLICATION
z
Direct Logic-Level Interface: TTL/CMOS
z
Drivers: Relays, Solenoids, Lamps, Hammers,Display,
Memories, Transistors, etc.
z
Battery Operated Systems
z
Solid-State Relays
Equivalent Circuit
MARKING
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
50
Continuous Gate-Source Voltage
VGSS
±20
Continuous Drain Current
ID
0.22
A
Power Dissipation
PD
0.3
W
RθJA
417
℃/W
Tj
150
Tstg
-55 ~+150
Thermal Resistance from Junction to Ambient
Operating Temperature
Storage Temperature
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1
V
℃
Rev. - 1.0
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Off characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
Gate-body leakage
IGSS
VDS =0V, VGS =±20V
±100
nA
Zero gate voltage drain current
IDSS
VDS =50V, VGS =0V
0.5
µA
VDS =30V, VGS =0V
100
nA
1.50
V
50
V
On characteristics
Gate-threshold voltage (note 1)
VGS(th)
Static drain-source on-resistance (note 1)
RDS(on)
Forward transconductance (note 1)
gFS
VDS =VGS, ID =1mA
0.80
VGS =10V, ID =0.22A
0.88
3.50
VGS =4.5V, ID =0.22A
1.50
6
VDS =10V, ID =0.22A
0.12
Ω
S
Dynamic characteristics (note 2)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
27
VDS =25V,VGS =0V, f=1MHz
pF
13
6
Switching characteristics
Turn-on delay time (note 1,2)
Rise time (note 1,2)
Turn-off delay time (note 1,2)
Fall time (note 1,2)
td(on)
5
tr
VDD=30V, VDS=10V,
18
td(off)
ID =0.29A,RGEN=6Ω
36
tf
ns
14
Drain-source body diode characteristics
Body diode forward voltage (note 1)
VSD
IS=0.44A, VGS = 0V
1.4
V
Notes:
1.
Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.
2.
These parameters have no way to verify.
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2
Rev. - 1.0
Typical Characteristics
Output Characteristics
Transfer Characteristics
2.0
1.2
Ta=25℃
VDS=3V
VGS=3V,4V,5V,6V
Pulsed
VGS=10V
1.0
(A)
(A)
1.5
ID
VGS=5V
1.0
DRAIN CURRENT
ID
DRAIN CURRENT
Pulsed
VGS=4V
VGS=3V
0.5
Ta=25℃
0.8
Ta=100℃
0.6
0.4
0.2
VGS=2V
0.0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
VDS
0.0
5
0
(V)
1
2
Pulsed
Ta=25℃
Pulsed
ID=500mA
5
1.2
1.1
1.0
0.9
VGS=10V
0.8
RDS(ON)
( )
VGS=4.5V
4
ON-RESISTANCE
( )
RDS(ON)
5
(V)
6
1.3
ON-RESISTANCE
4
VGS
RDS(ON) —— VGS
RDS(ON) —— ID
1.5
1.4
3
GATE TO SOURCE VOLTAGE
3
0.7
Ta=100℃
2
1
0.6
Ta=25℃
0.5
0.2
0.6
0.4
DRAIN CURRENT
0.8
ID
0
1.0
0
(A)
2
6
4
GATE TO SOURCE VOLTAGE
8
VGS
10
(V)
Threshold Voltage
IS —— VSD
2.0
1
Ta=100℃
Ta=25℃
0.01
1E-3
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE
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1.5
VTH
0.1
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
Pulsed
1.2
ID=250uA
1.0
0.5
0.0
25
1.4
VSD (V)
50
75
JUNCTION TEMPERATURE
3
100
Tj
125
(℃ )
Rev. - 1.0
6273DFNDJH2XWOLQH'LPHQVLRQV
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
627 6XJJHVWHG3DG/D\RXW
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
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4
Rev. - 1.0
6277DSHDQG5HHO
SOT-323 Reel
D
I
G
W2
H
3000
2500
2000
1500
1000
D2
D1
500
W1
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5
Rev. - 1.0
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