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BT136S

BT136S

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    TO252

  • 描述:

    TO-252-2L塑料封装晶闸管

  • 数据手册
  • 价格&库存
BT136S 数据手册
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Thyristors BT136S TRIAC TO-252-2L MAIN FEATURES Symbol value IT(RMS) 6 VDRM/VRRM 600 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope , intended for use in applications requiring high bidirectional transient andblocking voltage capability and high thermal cycling performance. .Typical applications include motor control, industrial and domestic lighting , heating and static switching. ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted) symbol parameter D2 PAK/TO-220 IT(RMS) RMS on-state current (full sine wave) ITSM Non repetitive surge peak on-state current (full sine wave, Tj =25℃) IGM Peak gate current TC=107℃ value unit 6 A t=20ms 25 t=16.7ms 27 Tj=125℃ A 2 A 0.5 W PG(AV) Average gate power dissipation Tstg Storage junction temperature range -40 to +150 Tj Operating junction temperature range -40 to +125 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Rated repetitive peak off-state/reverse voltage VDRM,VRRM ID=10μA Rated repetitive peak off-state current IDRM, IRRM VD=620V 10 μA IT=5A 1.7 V T2(+), G(+) 10 mA VTM On-state voltage Ⅰ Ⅱ Gate trigger current Ⅲ IGT Min Max 600 Unit V T2(+), G(-) VD=12V 10 mA T2(-), G(-) RL=100Ω 10 mA Ⅳ T2(-), G(+) - mA Ⅰ T2(+), G(+) 1.45 V Ⅱ Gate trigger voltage Ⅲ VGT T2(+), G(-) VD=12V 1.45 V T2(-), G(-) RL=100Ω 1.45 V - V 20 mA T2(-), G(+) Ⅳ Holding current conditions IH IT =100mA IG=20mA C,May,2013
BT136S 价格&库存

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BT136S
    •  国内价格
    • 5+0.77650
    • 50+0.70900
    • 500+0.61900
    • 1000+0.55150
    • 2500+0.52000

    库存:585