BZT52C39S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BZT52C2V4S-BZT52C39S ZENER DIODE SOD-323 FEATURES z Planar die construction z 200mW power dissipation on ceramic PBC z General purpose, medium current z Ideally suited for automated assembly processes z Available in lead free version Maximum Ratings (Ta=25℃ unless otherwise specified ) Characteristic Forward Voltage (Note 2) @ IF = 10mA Power Dissipation(Note 1) Thermal ResistanceIURP Junction to Ambient -XQFWLRQTemperature Storage Temperature Range Symbol Value Unit VF 0.9 V PD 200 mW RθJA 625 ℃/W ℃ T 150 j TVWJ -5~+150 ℃ D,Jan,2014 Electrical Characteristics(Ta = 25℃ unless otherwise specified ) Zener Voltage Range (Note 2) TYPE Maximum Typical Maximum Zener Impedance Reverse Temperature (Note 3) Current Coefficient (Note 2) @IZTC mV/℃ Marking VZ@IZT IZT Nom(V) Min(V) Max(V) (mA) ZZT@IZT ZZK@IZK Ω Test Current IZTC IZK IR VR (mA) μA V Min Max mA BZT52C2V4S WX 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52C2V7S W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3V0S W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3V3S W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52C3V6S W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52C3V9S W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V3S W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V7S W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52C5V1S W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52C5V6S W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2 2.5 5 BZT52C6V2S WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52C6V8S WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52C7V5S WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52C8V2S WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1S WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10S WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11S WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12S WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13S WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15S WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13 5 BZT52C16S WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14 5 BZT52C18S WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16 5 BZT52C20S WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22S WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24S WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27S WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30S WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33S WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36S WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39S WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 Notes:1. Device mounted on ceramic PCB 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 . 2. Short duration test pulse used to minimize self-heating effect. 3. f = 1kHz. D,Jan,2014 Typical Characteristics BZT52C2V4S-39S Zener Characteristics(11 V to 39 V) Zener Characteristics(VZ Up to 10 V) 100 100 Ta =25℃ Ta =25℃ Pulsed 10 39 33 30 27 24 20 18 38 0.5 1 2 3 4 5 6 7 8 9 10 11 10 12 14 16 18 VZ, ZENER VOLTAGE (V) 20 22 24 26 28 30 32 34 40 42 VZ, ZENER VOLTAGE (V) Temperature Coefficients Typical Leakage Current 40 100 TYPICAL Ta VALUES 35 FOR BZT52C2V4S SERIES 10 30 IR, LEAKAGE CURRENT (uA) θVZ, TEMPERATURE COEFFICIENT (mV/℃) 36 1 0.5 25 20 VZ @ IZT 15 10 5 1 0.1 0.01 Ta=100℃ 1E-3 0 Ta=25℃ -5 1E-4 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 0 5 VZ, NOMINAL ZENER VOLTAGE (V) 10 15 20 25 30 35 40 VZ, NOMINAL ZENER VOLTAGE (V) Effect of Zener Voltage on Zener Impedance Typical Capacitance 1000 1000 Ta=25℃ Ta =25℃ 100 1V BIAS BIAS AT 50% OF VZ NOM 10 IZ(AC)=0.1IZ(DC) IZ=1mA 0V BIAS ZZT, DYNAMIC IMPEDANCE(Ω) C, CAPACITANCE (pF) 36 1 22 PD =200mW 11 12 13 10 9.1 7.5 8.2 6.2 6.8 5.6 4.7 5.1 10 15 IZ, ZENER CURRENT (mA) PD =200mW 2.4 IZ, ZENER CURRENT (mA) Pulsed 1 f=1kHz 100 5mA 10 1 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Power Derating Curve 200 POWER DISSIPATION PD (mW) 250 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 D,Jan,2014