JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Diodes
CESDLC5V0M5
Quad-direction ESD Protection Array
DESCRIPTION
SOT-563
Designed to protect voltage sensitive electronic components from ESD and other
transients. Excellent clamping capability, low leakage, low capacitance, and fast
response time provide best in class protection on designs that are exposed to ESD.
The combination of small size, low capacitance, and high level of ESD protection
makes them a flexible solution for applications such as HDMI, Display Port TM, and
MDDI interfaces. It is designed to replace multiplayer varistors (MLV) in consumer
equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc.
FEATURES
Uni-directional ESD protection of five lines
Excellent package:1.6mm×1.2mm×0.6mm
Low capacitance: 10pF(Typ)
Fast response time
Low reverse stand−off voltage: 5V
JESD22-A114-B ESD Rating of class 3B per human
Low reverse clamping voltage
Low leakage current
body model
IEC 61000-4-2 Level 3 ESD protection
APPLICATIONS
Computers and peripherals
Portable electronics
Audio and video equipment
Other electronics equipments
Subscriber Identity Module (SIM) card protection
Cellular handsets and accessories
communication systems
MARKING
L2 = Device code
Solid dot=Pin1 indicator
Front side
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1
C,Mar,2014
CHANGJIANG ELEC.TECH.
CESDLC5V0M5
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
IEC 61000-4-2 ESD Voltage
Air Model
Contact Model
JESD22-A114-B ESD Voltage
Per Human Body Model
ESD Voltage
VESD(1)
±10
kV
±8
±0.4
(2)
33
W
(2)
2.5
A
PPP
Peak Pulse Current
Unit
±10
Machine Model
Peak Pulse Power
Limit
IPP
Lead Solder Temperature − Maximum (10 Second Duration)
TL
260
℃
Junction Temperature
Tj
150
℃
Tstg
-55 ~ +150
℃
Storage Temperature Range
(1).Device stressed with ten non-repetitive ESD pulses, Per channel(I/O to GND).
(2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
ESD standards compliance
IEC61000-4-2 Standard
JESD22-A114-B Standard
Contact Discharge
Air Discharge
ESD Class
Human Body Discharge V
Level
Test Voltage kV
Level
Test Voltage kV
0
0~249
1
2
1
2
2
4
2
4
1A
1B
1C
250~499
500~999
1000~1999
3
6
3
8
4
8
4
15
2
3A
3B
2000~3999
4000~7999
8000~15999
ESD pulse waveform according to IEC61000-4-2
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8/20μs pulse waveform according to IEC 61000-4-5
2
C,Mar,2014
CHANGJIANG ELEC.TECH.
CESDLC5V0M5
ELECTRICAL PARAMETER
Symbol
Parameter
VC
Clamping Voltage @ IPP
IPP
Peak Pulse Current
VBR
Breakdown Voltage @ IT
IT
Test Current
IR
Reverse Leakage Current @ VRWM
VRWM
Reverse Standoff Voltage
VF
Forward Voltage@ IF
IF
Forward Current
V-I characteristics for a uni-directional TVS
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
5
V
7.2
V
Per Diode
Reverse stand off voltage
Breakdown voltage
(1)
VRWM
V(BR)
IT=1mA
6.2
Reverse leakage current
IR
VRWM=5V
1.0
μA
Forward voltage
VF
IF=10mA
0.9
V
IPP=2.5A
13
V
12
pF
Clamping voltage
Junction capacitance
(2)
VC
CJ
VR=0V,f=1MHz
10
(1).Other voltages available upon request.
(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5
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C,Mar,2014
CHANGJIANG ELEC.TECH.
CESDLC5V0M5
TYPICAL CHARACTERISTICS
Forward
Characteristics
Reverse
100
Pulsed
Pulsed
80
(mA)
(mA)
T=
a 2
5℃
REVERSE CURRENT IR
10
T=
a 1
00
℃
IF
FORWARD CURRENT
Characteristics
100
1
60
Ta=25℃
Ta=100℃
40
20
0.1
0.5
0.6
0.7
0.8
0.9
FORWARD VOLTAGE
VC ——
15
VF
1.0
0
1.1
0
2
4
REVERSE VOLTAGE
(V)
6
8
VR
10
(V)
Capacitance Characteristics
IPP
12
Ta=25℃
Ta=25℃
f=1MHz
tp=8/20us
JUNCTION CAPACITANCE
CJ (pF)
CLAMPING VOLTAGE VC(V)
10
12
9
6
8
6
4
3
0.0
0.5
1.0
1.5
2.0
2.5
2
3.0
1
2
REVERSE VOLTAGE
REVERSE PEAK PULSE CURRENT IPP(A)
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0
4
3
4
VR
5
(V)
C,Mar,2014
CESDLC5V0M5
CHANGJIANG ELEC.TECH.
PACKAGE OUTLINE AND PAD LAYOUT INFORMATION
SOT-563 Package Outline Dimensions
SOT-563 Suggested Pad Layout
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C,May,2014
CESDLC5V0M5
CHANGJIANG ELEC.TECH.
TAPE AND REEL INFORMATION
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C,May,2014
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