CJ2301

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V(D-S) MOSFET V(BR)DSS ID RDS(on)MAX SOT-23 112mΩ@-4.5V -20 V 3 -2.3A 142mΩ@-2.5V 1. GATE 2. SOURCE 1 2 3. DRAIN FEATURE z TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices z z DC/DC Converter MARKING Equivalent Circuit S1=Device code Solid dot = Green molding compound device,if none, the normal device Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID -2.3 Pulsed Drain Current IDM -10 Continuous Source-Drain Diode Current IS -0.72 Maximum Power Dissipation PD 0.4 W ℃/W Thermal Resistance from Junction to Ambient(t ≤5s) R θJA 312.5 Operation Junction and Storage Temperature Range TJ,Tstg -55 ~+150 www.jscj-elec.com 1 Unit V A ℃ Rev. - 2.1 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max -0.7 -1 Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.4 V Gate-source leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =-20V, VGS =0V -1 µA Drain-source on-state resistance a Forward transconductance RDS(on) a gfs VGS =-4.5V, ID = -2.8A 0.090 0.112 VGS =-2.5V, ID = -2.0A 0.110 0.142 VDS =-5V, ID =-2.8A Ω S 6.5 b Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd 405 VDS =-10V,VGS =0V,f =1MHz 55 VDS =-10V,VGS =-4.5V,ID =-3A VDS =-10V,VGS =-2.5V,ID =-3A td(on) Turn-on delay time Rise time tr Turn-off delay time td(off) Fall time tf 5.5 10 3.3 6 0.7 nC 1.3 = f 1MHz Rg Gate resistance pF 75 VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω 6.0 Ω 11 20 35 60 30 50 10 20 ns Drain-source body diode characteristics Continuous source-drain diode current Pulse diode forward current Body diode voltage a IS -1.3 TC=25℃ ISM VSD A -10 IS=-0.7A -0.8 -1.2 V Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 2.1 Typical Characteristics Output Characteristics -10 Transfer Characteristics -10 VGS= -4.5V,-3.5V,-2.5V Ta=25℃ Ta=25℃ Pulsed Pulsed -8 -8 (A) VGS=-1.5V ID -4 -6 DRAIN CURRENT ID -6 DRAIN CURRENT (A) VGS=-2.0V -4 -2 -0 -2 VGS=-1.0V -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE RDS(ON) 150 —— VDS -0 -0.0 -4 (V) -0.5 -1.0 -1.5 GATE TO SOURCE VOLTAGE ID RDS(ON) 250 Ta=25℃ —— -2.0 VGS -2.5 (V) VGS Ta=25℃ Pulsed Pulsed 200 (mΩ) 90 VGS=-4.5V 60 30 -0 -2 -4 -6 DRAIN CURRENT -10 -3 RDS(ON) VGS=-2.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) 120 IS —— ID -8 150 100 50 0 -10 (A) ID=-2.8A -0 -2 -4 GATE TO SOURCE VOLTAGE -6 VGS -8 (V) VSD Ta=25℃ Pulsed SOURCE CURRENT IS (A) -1 -0.3 -0.1 -0.03 -0.01 -3E-3 -1E-3 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com -1.0 VSD -1.2 (V) 3 Rev. - 2.1 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.1 SOT-23 Tape and Reel 30,000 www.jscj-elec.com 120,000 5 Rev. - 2.1