CJ2302

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302 N-Channel 20-V(D-S) MOSFET V(BR)DSS ID RDS(on)MAX SOT-23 60mΩ@4.5V 20 V 2.1A 115mΩ@ 2.5V 1. GATE 2. SOURCE 3. DRAIN APPLICATION Load Switch for Portable Devices z DC/DC Converter z FEATURE z TrenchFET Power MOSFET MARKING Equivalent Circuit S2=Device code Solid dot = Green molding compound device Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID 2.1 Continuous Source-Drain Current(Diode Conduction) IS 0.6 Power Dissipation PD Thermal Resistance from Junction to Ambient (t≤5s) Operation Junction and Storage Temperature Range www.jscj-elec.com RθJA TJ,TSTG 1 0.4 312.5 -55 ~+150 Unit V A W ℃/W ℃ Rev. - 2.1 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max 0.95 1.2 Units Static Drain-source breakdown voltage V(BR)DSS Gate-threshold voltage VGS(th) VGS = 0V, ID =10µA VDS =VGS, ID =250µA 20 0.65 V Gate-body leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =20V, VGS =0V 1 µA a Drain-source on-resistance Forward transconductance rDS(on) a Diode forward voltage VGS =4.5V, ID =3.6A 0.035 0.060 VGS =2.5V, ID =3.1A 0.045 0.115 gfs VDS =5V, ID =3.6A 8 VSD IS=0.94A,VGS=0V 0.76 1.2 4.0 10 Ω S V Dynamic Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd 1.5 Ciss 300 Input capacitance b Output capacitance b Reverse transfer capacitance Switching Coss b VDS =10V,VGS =4.5V,ID =3.6A VDS =10V,VGS =0V,f=1MHz nC 0.65 pF 120 80 Crss b Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD=10V, RL=5.5Ω, ID ≈3.6A, VGEN=4.5V,Rg=6Ω tf 7 15 55 80 16 60 10 25 ns Notes : a. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. b. These parameters have no way to verify. www.jscj-elec.com 2 Rev. - 2.1 Typical Characteristics Transfer Characteristics Output Characteristics 20 VGS=3.5、3.0、2.5V 10 Ta=25℃ Ta=25℃ Pulsed Pulsed 8 15 (A) VGS=1.5V 5 ID 10 6 DRAIN CURRENT DRAIN CURRENT ID (A) VGS=2.0V 4 2 0 0 2 4 6 DRAIN TO SOURCE VOLTAGE RDS(ON) 120 —— 8 VDS 0 0.0 10 (V) 0.5 1.0 1.5 GATE TO SOURCE VOLTAGE RDS(ON) ID —— 2.0 VGS VGS 300 Ta=25℃ Ta=25℃ Pulsed Pulsed 250 (mΩ) 200 RDS(ON) 80 VGS=2.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) 100 60 VGS=4.5V 40 20 2.5 (V) 150 100 ID=3.6A 50 0 5 10 15 DRAIN CURRENT 10 IS —— 20 ID 25 0 30 (A) 0 2 4 6 GATE TO SOURCE VOLTAGE 8 VGS 10 (V) VSD Ta=25℃ SOURCE CURRENT IS (A) Pulsed 1 0.1 0.0 0.4 0.8 1.2 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.6 VSD 2.0 (V) 3 Rev. - 2.1 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.1 SOT-23 Tape and Reel 120,000 30,000 www.jscj-elec.com 5 Rev. - 2.1