CJ2303

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2303 P-Channel 30-V(D-S) MOSFET V(BR)DSS ID RDS(on)MAX SOT-23   190mΩ@-10V  -30 V -1.9A 330mΩ@-4.5V   1. GATE 2. SOURCE 3. DRAIN FEATURE z TrenchFET Power MOSFET APPLICATION z Load Switch for Portable Devices DC/DC Converter z MARKING Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current ID -1.9 Continuous Source-Drain Diode Current IS -0.83 Maximum Power Dissipation PD 0.35 W RθJA 357 ℃/W Thermal Resistance from Junction to Ambient(t≤5s) Junction Temperature TJ 150 Storage Temperature TSTG -50 ~+150 www.cj-elec.com 1 V A ℃ D,Aug,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min V(BR)DSS VGS = 0V, ID =-250µA -30 VGS(th) VDS =VGS, ID =-250µA -1 Gate-Source Leakage IGSS VDS =0V, VGS =±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS =-30V, VGS =0V -1 µA Typ Max -1.6 -3 Units Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage a Drain-Source On-State Resistance Forward Transconductance RDS(on) a gfs VGS =-10V, ID =-1.9A 0.075 0.190 VGS =-4.5V, ID =-1.4A 0.115 0.330 VDS =-5V, ID =-1.9A 1 V Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf 155 VDS =-15V,VGS =0V,f =1MHz pF 35 25 VDS =-15V,VGS =-10V,ID =-1.9A VDS =-15V,VGS =-4.5V,ID=-1.9A 4 8 2 4 0.6 nC 1 f =1MHz VDD=-15V, RL=10Ω, ID =-1.5A, VGEN=-10V,Rg=1Ω VDD=-15V, RL=10Ω, ID =-1.5A, VGEN=-4.5V,Rg=1Ω 1.7 8.5 17 4 8 11 18 11 18 8 16 36 44 37 45 12 18 9 14 Ω ns Drain-source Body diode characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage a IS -1.75 TC=25℃ -10 ISM VSD A IS=-1.5A -0.8 -1.2 V Notes : a. Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%. b. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 D,Aug,2015 Typical Characteristics Output Characteristics Transfer Characteristics -20 -12 VDS=-3.0V Ta=25℃ -18 Pulsed VGS=-6V Pulsed -10 ID VGS=-4.5V -10 VGS=-4V -8 VGS=-3.5V -6 VGS=-3V -4 Ta=25℃ Ta=100℃ -3 -5 (A) VGS=-5V DRAIN CURRENT (A) -12 DRAIN CURRENT -14 ID -16 -8 -6 -4 -2 -2 -0 -0 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS -4 -0 ID RDS(ON) Pulsed (mΩ) 120 RDS(ON) VGS=-4.5V 100 ON-RESISTANCE (mΩ) —— -7 VGS -8 -9 -10 -9 -10 (V) VGS 700 130 RDS(ON) -6 Ta=25℃ 140 ON-RESISTANCE -4 800 150 90 -2 GATE TO SOURCE VOLTAGE 160 110 -1 (V) 80 70 VGS=-10V 60 50 40 600 ID=-2A 500 400 300 Ta=100℃ 200 Pulsed Ta=25℃ 100 Pulsed 30 20 0 -0 -1 -2 -3 DRAIN CURRENT IS —— ID -4 -5 -0 -1 -2 -3 -4 -5 -6 GATE TO SOURCE VOLTAGE (A) VSD -7 VGS -8 (V) Threshold Voltage -5 -1.8 (V) VTH -1 Ta=100℃ Pulsed -0.1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) -1.7 Ta=25℃ Pulsed -1.6 ID=-250uA -1.5 -1.4 -1.3 -0.01 -0.0 -0.4 -0.8 SOURCE TO DRAIN VOLTAGE -1.2 VSD (V) -1.6 -1.2 25 50 75 JUNCTION TEMPERATURE 100 TJ 125 ( ℃)  3 D,Aug,2015 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 4 D,Aug,2015 SOT-23 Tape and Reel www.cj-elec.com 5 D,Aug,2015