CJ2304

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2304 N-Channel MOSFET V(BR)DSS ID RDS(on)MAX   30 V SOT-23 60mΩ@10V  3.3A 75mΩ@4.5V   1. GATE 2. SOURCE 3. DRAIN FEATURE z TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices z DC/DC Converter z MARKING Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 3.3 Pulsed Drain Current IDM 15 Continuous Source-Drain Diode Current IS 0.9 Maximum Power Dissipation PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~+150 Thermal Resistance from Junction to Ambient (t≤5s) www.cj-elec.com 1 V A ℃ F,Aug,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test condition Min Typ Max 1.55 2.2 Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 30 VGS(th) VDS =VGS, ID =250µA 1 Gate-body leakage IGSS VDS =0V, VGS =±20V ±100 nA Zero gate voltage drain current IDSS VDS =30V, VGS =0V 1 µA Gate-source threshold voltage Drain-source on-state resistancea Forward transconductancea RDS(on) gfs VGS =10V, ID =3.2A 0.037 0.060 VGS =4.5V, ID =2.8A 0.057 0.075 VDS =4.5V, ID =2.5A 2.5 V Ω S b Dynamic Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay Time td(on) Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time tr td(off) tf td(on) tr td(off) tf VDS =15V,VGS =10V,ID =3.4A VDS =15V,VGS =4.5V,ID =3.4A 4.5 6.7 2.1 3.2 0.85 nC 0.65 f =1.0MHz 0.8 4.4 8.8 Ω 235 VDS =15V,VGS =0V,f =1MHz pF 45 17 VDD=15V, RL=5.6Ω, ID ≈2.7A, VGEN=4.5V,Rg=1Ω VDD=15V, RL=5.6Ω, ID ≈2.7A, VGEN=10V,Rg=1Ω 12 20 50 75 12 20 22 35 5 10 12 20 10 15 5 10 ns Drain-source body diode characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD TC=25℃ IS=2.7A,VGS=0V 0.8 1.4 A 15 A 1.2 V Notes : a. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. b. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 F,Aug,2015 Typical Characteristics Output Characteristics Transfer Characteristics 20 14 VGS=7V VGS=6V VDS=3V 12 VGS=5V Ta=100℃ 10 ID (A) 12 DRAIN CURRENT ID DRAIN CURRENT (A) 16 VGS=4V 8 8 Ta=25℃ 6 4 VGS=3V 4 2 0 0 1 2 3 DRAIN TO SOURCE VOLTAGE VDS 0 4 0.0 0.4 (V) 0.8 1.2 1.6 2.0 2.4 2.8 3.2 GATE TO SOURCE VOLTAGE 3.6 VGS 4.0 4.4 4.8 (V) RDS(ON) —— VGS RDS(ON) —— ID 80 400 Ta=25℃ Pulsed (mΩ) 40 300 ID=2.5A RDS(ON) RDS(ON) 50 VGS=4.5V ON-RESISTANCE (mΩ) 60 ON-RESISTANCE 70 VGS=10V 30 20 200 Ta=100℃ 100 Pulsed Ta=25℃ 10 Pulsed 0 0 1 2 3 4 5 6 DRAIN CURRENT ID 7 8 9 0 10 0 (A) 1 2 3 4 5 6 GATE TO SOURCE VOLTAGE 7 VGS 8 9 10 (V) Threshold Voltage IS —— VSD 10 2.0 VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1.8 1 Ta=100℃ Ta=25℃ Pulsed Pulsed 1.6 ID=250uA 1.4 1.2 1.0 0.8 0.1 0.0 0.4 0.8 1.2 SOURCE TO DRAIN VOLTAGE 1.6 VSD (V) 2.0 0.6 25 50 75 JUNCTION TEMPERATURE 100 Tj 125 (℃ )  3 F,Aug,2015 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 4 F,Aug,2015 SOT-23 Tape and Reel www.cj-elec.com 5 F,Aug,2015