CJ2321

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V(D-S) MOSFET V(BR)DSS ID RDS(on)MAX 57mΩ@-4.5V    -20 V SOT-23 76mΩ@-2.5V  -2.9A 110mΩ@-1.8V   1. GATE 2. SOURCE 3. DRAIN FEATURE z TrenchFET Power MOSFET MARKING APPLICATION PA Switch z Load Switch z Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current ID -2.9 Pulsed Drain Current IDM -12 Continuous Source-Drain Diode Current IS -0.59 Maximum Power Dissipation PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -50 ~+150 Parameter Thermal Resistance from Junction to Ambient www.cj-elec.com 1 Unit V A ℃ E,May,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Symbol Parameter Test Condition Min Typ Max Unit Static Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-10µA Gate-source leakage IGSS VDS =0V, VGS =±12V ±100 nA Zero Gate voltage drain current IDSS VDS =-16V, VGS =0V -1.0 µA Gate-source threshold voltage VGS(th) -0.9 V Drain-source on-state resistance RDS(on) VDS =VGS, ID =-250µA -20 V -0.4 VGS =-4.5V, ID =-3.3A 0.057 VGS =-2.5V, ID =-2.8A 0.076 VGS =-1.8V, ID =-2.3A 0.110 Forward tranconductance gfS VDS =-5V, ID =-3.3A Forward diode voltage VSD VGS =0V,IS=-1.6A 3 Ω S -1.2 V Dynamic Input capacitancea,b Coss Output capacitance Reverse transfer capacitance a,b a VDS =-6V,VGS =0V,f =1MHz a Gate-Source charge a 120 Crss Gate-Drain charge Qgs pF 170 13 Qg Total Gate charge Switching 715 Ciss a,b VDS =-6V,VGS =-4.5V,ID=-3.3A Qgd nc 1.2 nc 2.2 nc a,b Turn-on delay Time Rise time Turn-off delay time Fall time td(on) tr td(off) 25 VGEN=-4.5V,VDD=-6V, 55 ID =-1.0A,RG=6Ω, RL=6Ω 90 tf ns 60 Notes : a. Pulse Test : pulse width ≤300µs, duty cycle ≤2%. E. These parameters have no way to verify. www.cj-elec.com 2 E,May,2016 Typical Characteristics Output Characteristics -16 Ta=25℃ Pulsed Transfer Characteristics -10 VGS=-4.5V,-4.0V,-3.5V,-3.0V,-2.5V Ta=25℃ Pulsed VGS=-2.0V (A) ID ID (A) -8 -12 DRAIN CURRENT DRAIN CURRENT -6 -8 VGS=-1.5V -4 -4 -2 VGS=-1.0V -0 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 300 VDS -0 -0.0 -4 -0.5 -1.0 -1.5 GATE TO SOURCE VOLTAGE (V) ID RDS(ON) —— 500 -2.0 VGS -2.5 (V) VGS Ta=25℃ Ta=25℃ Pulsed Pulsed 250 (mΩ) RDS(ON) 200 150 VGS=-1.8V 100 VGS=-2.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) 400 300 200 ID=-3.3A 100 50 VGS=-4.5V 0 0 -0 -2 -4 -6 DRAIN CURRENT -8 ID -10 -12 (A) -0 -2 -4 GATE TO SOURCE VOLTAGE -6 VGS -8 (V) IS —— VSD -20 Ta=25℃ Pulsed SOURCE CURRENT IS (A) -10 -3 -1 -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 SOURCE TO DRAIN VOLTAGE -1.2 -1.4 VSD (V)  3 E,May,2016 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 4 E,May,2016 SOT-23 Tape and Reel www.cj-elec.com 5 E,May,2016