CJ3139K

             !"# $% &'( P-Channel MOSFET V(BR)DSS     ID RDS(on)MAX         95 （TYP）  18 1. GATE 2. SOURCE 3. DRAIN % z Lead Free Product is Acquired z Surface Mount Package z P-Channel Switch with Low RDS(on) z Operated at Low Logic Level Gate Drive $(    z Load/Power Switching z Interfacing, Logic Switching z Battery Management for Ultra Small Portable Electronics Equivalent Circuit D G S  " # 01#+2# 0#34 $)*"* + , -./ +*##+ 5*60 7"#   Drain-Source Voltage VDS -20 V Typical Gate-Source Voltage VGS ±2 V Continuous Drain Current (note 1) ID -0.66 A Pulsed Drain Current IDM -1.2 A PD 150 mW RJA 833 /W Junction Temperature TJ 150  Storage Temperature TSTG -55~+150  TL 260  (tp=10­s) Power Dissipation (note 1) Thermal Resistance from Junction to Ambient (note 1) Lead Temperature for Soldering Purposes(1/8” from case for 10 s)     HAug $%        Ta =25  unless otherwise specified +*##+ 5*60 # 0 30 $ 5! $)       Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =-250μA Zero gate voltage drain current IDSS VDS =-20V,VGS = 0V -1 μA Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±20 μA VGS(th) VDS =VGS, ID =-250μA -0.45 - V VGS =-4.5V, ID =-1A 430 520 m VGS =-2.5V, ID =-0.8A 624 700 m VGS =-1.8V, ID =-0.5A 950 m 1.2 S Gate threshold voltage (note 2) Drain-source on-resistance (note 2) R DS(on) Forward transconductance (note 2) gFS VDS =-10V, ID =-0.54A Diode forward voltage VSD IS=-0.5A, VGS = 0V -20 -0.35 V -1.2 V 113 170 pF 15 25 pF 15 pF $    - 0# ;4 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 9 td(on) 9 ns VDS =-16V,VGS =0V,f =1MHz