JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401 P-Channel Enhancement Mode Field Effect Transistor
SOT-23
FEATURE
z
High dense cell design for extremely low RDS(ON).
z
Exceptional on-resistance and maximum DC current capability
1. GATE
2. SOURCE
3. DRAIN
D
MARKING: R1
G
S
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
ID
-4.2
A
Power Dissipation
PD
350
mW
RθJA
357
℃/W
Thermal Resistance from Junction to Ambient (t
很抱歉，暂时无法提供与“CJ3401”相匹配的价格&库存，您可以联系我们找货
免费人工找货- 国内价格
- 20+0.18256
- 300+0.14781
- 1200+0.12850
- 3000+0.11692
- 国内价格
- 20+0.19916
- 200+0.16125
- 600+0.14019
- 3000+0.12755
- 9000+0.11654
- 21000+0.11070
- 国内价格
- 1+0.55512
- 200+0.18576
- 1500+0.11556
- 3000+0.09180
