JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401 P-Channel Enhancement Mode Field Effect Transistor
SOT-23
FEATURE
z
High dense cell design for extremely low RDS(ON).
z
Exceptional on-resistance and maximum DC current capability
1. GATE
2. SOURCE
3. DRAIN
D
MARKING: R1
G
S
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
ID
-4.2
A
Power Dissipation
PD
350
mW
RθJA
357
℃/W
Thermal Resistance from Junction to Ambient (t
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免费人工找货- 国内价格
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- 20+0.24527
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- 1+0.16160
- 3000+0.14260
