CJ3401A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor V(BR)DSS ID RDS(on)MAX SOT-23 60 mΩ@-10V  -4.2A  70 mΩ@-4.5V -30V 85 mΩ@-2.5V FEATURE High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum z APPLICATION z Load Switch for Portable Devices z DC/DC Converter DC current capability Equivalent Circuit MARKING D G S Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -4.2 A Power Dissipation PD 400 mW RθJA 313 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient (t