CJ3404

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3404 N-Channel Enhancement Mode Field Effect Transistor V(BR)DSS 30 V ID RDS(on)MAX SOT-23   30mΩ@ 10V  5.8A 42mΩ@4.5V  1. GATE 2. SOURCE 3. DRAIN DESCRIPTION The CJ3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.The source leads are separated to allow a Kelvin connection to the source,which may be used to bypass the source inductance. MARKING Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-source voltage VDS 30 V Gate-source voltage VGS ±20 V Continuous drain current (t ≤10s) ID 5.8 A Pulsed drain current * IDM 30 A Thermal resistance from junction to ambient RθJA 357 ℃/W Junction temperature TJ 150 ℃ Storage temperature Tstg -55~ 150 ℃ * Repetitive rating : Pulse width limited by maximum junction temperature. www.cj-elec.com 1 E,Aug,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Test Condition Symbol Min Typ Max Units STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =30V,VGS = 0V Gate-body leakage current IGSS VGS =±20V, VDS = 0V Gate threshold voltage VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance (note 1) RDS(on) 30 V 1 µA ±100 nA 1.4 3 V VGS =10V, ID =5.8A 23 30 mΩ VGS =4.5V, ID =4.8A 31 42 mΩ Forward tranconductance (note 1) gFS VDS =5V, ID =5.8A Diode forward voltage VSD IS=1A 1 5 S 1 V 820 pF DYNAMIC PARAMETERS (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg VDS =15V,VGS =0V,f =1MHz 118 pF 85 pF VDS =0V,VGS =0V,f =1MHz 1.5 Ω 6.5 ns SWITCHING PARAMETERS(note 2) Turn-on delay time td(on) Turn-on rise time Turn-off delay time tr VGS=10V,VDS=15V, 3.1 ns td(off) RL=2.6Ω,RGEN=3Ω 15.1 ns 2.7 ns Turn-off fall time tf Note : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. These parameters have no way to verify. www.cj-elec.com 2 E,Aug,2015 Typical Characteristics Output Characteristics Transfer Characteristics 18 18 Ta=25℃ VGS=4V,5V,6V,8V Pulsed 16 Pulsed 14 12 DRAIN CURRENT ID VGS=3V ID (A) (A) 14 DRAIN CURRENT VDS=3V 16 10 8 6 VGS=2.5V 4 Ta=100℃ 10 Ta=25℃ 8 6 4 2 0 12 2 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0 5 0 (V) 1 2 3 GATE TO SOURCE VOLTAGE 4 VGS RDS(ON) —— VGS RDS(ON) —— ID 40 150 Pulsed Ta=25℃ Pulsed 35 (m) RDS(ON) 30 ON-RESISTANCE 25 20 ID=5.8A 125 VGS=4.5V (m) RDS(ON) ON-RESISTANCE 5 (V) VGS=10V 15 100 75 Ta=100℃ 50 25 Ta=25℃ 10 1 2 3 4 DRAIN CURRENT ID 5 0 6 0 (A) 2 4 6 GATE TO SOURCE VOLTAGE 8 VGS 10 (V) Threshold Voltage IS —— VSD 8 2.0 VTH 1 Ta=100℃ Ta=25℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) Pulsed 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 1.2 1.4 1.5 ID=250uA 1.0 0.5 25 1.6 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 Tj 125 ( ℃) E,Aug,2015 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 4 E,Aug,2015 SOT-23 Tape and Reel www.cj-elec.com 5 E,Aug,2015