CJA03N10

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA03N10 N-Channel MOSFET V(BR)DSS 100 V RDS(on)MAX ID @ 10V  140mΩ   3A SOT-89-3L 1. GATE DESCRIPTION 2. DRAIN 3. SOURCE The CJA03N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is suitable for use in a wide variety of applications. FEATURES z Lead free product is acquired z Special process technology for high ESD capability z High density cell design for ultra low RDS(on) z Good stability and uniformity with high EAS z Excellent package for good heat dissipation MARKING APPLICATION z Power switching application z Hard switching and high frequency circuits z Uninterruptible power supply Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Symbol Value Unit Drain-Source Voltage Parameter VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 3 A Pulsed Drain Current (note 1) IDM 20 A Power Dissipation PD 0.5 W RθJA 250 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient (note 2) www.cj-elec.com 1 D,Apr,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =100V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±100 nA Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 2 V Drain-source on-resistance (note 3) RDS(on) VGS =10V, ID =5A 140 mΩ Forward transconductance (note 3) gFS VDS =5V, ID =2.9A Diode forward voltage (note 3) VSD IS=3A, VGS = 0V 100 V 1 3 S 1.2 V DYNAMIC CHARACTERISTICS (note 4) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance 690 pF 120 pF Crss 90 pF td(on) 11 ns VGS=10V,VDS=30V, 7.4 ns RGEN=2.5Ω, ID =2A, RL=15Ω 35 ns VDS =25V,VGS =0V,f =1MHz SWITCHING CHARACTERISTICS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time tr td(off) Turn-off fall time tf 9.1 ns Total gate charge Qg 15.5 nC Gate-source Charge Qgs 3.2 nC Gate-drain Charge Qgd 4.7 nC VDS =30V,VGS =10V,ID =3A Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%. 4. Guaranteed by design, not subject to producting. www.cj-elec.com 2 D,Apr,2015 Typical Characteristics Transfer Characteristics Output Characteristics 20 20 Pulsed VDS=10V Pulsed VGS=10V (A) (A) 15 ID 3.5V DRAIN CURRENT DRAIN CURRENT ID VGS=4V 15 10 3V 5 10 Ta=100℃ 5 Ta=25℃ VGS=2.5V 0 0 1 2 3 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 300 4 VDS 0 0.0 5 1.0 0.5 (V) 1.5 2.0 2.5 3.0 GATE TO SOURCE VOLTAGE ID RDS(ON) 500 —— VGS 3.5 VGS Ta=25℃ Pulsed 400 (mΩ) 250 RDS(ON) VGS=2.5V RDS(ON) (mΩ) Ta=25℃ Pulsed VGS=10V 150 300 ON-RESISTANCE 200 ON-RESISTANCE 4.0 (V) 200 100 ID=5A 100 50 0.5 0 1.0 1.5 2.0 2.5 3.0 DRAIN CURRENT ID 3.5 0 4.0 6 9 12 GATE TO SOURCE VOLTAGE (A) IS —— VSD 10 3 VGS 15 18 (V) Threshold Voltage 1.9 Ta=25℃ Pulsed 1.8 VTH 0.1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1 0.01 1E-3 1E-4 400 500 600 700 800 900 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 1000 1100 1.7 1.6 1.5 1.4 25 1200 VSD (mV) ID=250uA 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) D,Apr,2015 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout www.cj-elec.com 4 D,Apr,2015 SOT-89-3L Tape and Reel www.cj-elec.com 5 D,Apr,2015