CJAA3139K

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03E Plastic-Encapsulate MOSFETS CJAA3139K P-Channel MOSFET V(BR)DSS WBFBP-03E ID RDS(on)MAX 520 mΩ@-4.5V -20V -0.66A 700m Ω@-2.5V 950 mΩ(TYP)@-1.8V 1.GATE 2.SOURCE 3.DRAIN FEATURE z z z z z z APPLICATION Lead Free Product is Acquired Surface Mount Package P-Channel Switch with Low RDS(on) Operated at Low Logic Level Gate Drive ESD Protected Gate Complementary to CJAA3134K z Load/ Power Switching z Interfacing Switching z Battery Management for Ultra Small Portable Electronics z Logic Level Shift Equivalent Circuit MARKING: ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Unit Drain-Source Voltage VDS -20 V Typical Gate-Source Voltage VGS ±12 V Continuous Drain Current (note 1) ID -0.66 A Pulsed Drain Current (tp=10us) IDM -1.2 A Power Dissipation (note 2) PD 100 mW RθJA 1250 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ 150 ℃ TL 260 ℃ Parameter Thermal Resistance from Junction to Ambient (note 1) Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 V Zero gate voltage drain current IDSS VDS =-20V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±20 uA Gate threshold voltage (note 2) VGS(th) VDS =VGS, ID =-250µA -1.1 V Drain-source on-resistance(note 2) RDS(on) -0.35 VGS =-4.5V, ID =-1A 430 520 mΩ VGS =-2.5V, ID =-0.8A 624 700 mΩ VGS =-1.8V, ID =-0.5A 950 mΩ 1.2 S Forward tranconductance(note 2) gFS VDS =-10V, ID =-0.54A Diode forward voltage VSD IS=-0.5A, VGS = 0V -1.2 V 113 170 pF 15 25 pF 15 pF DYNAMIC PARAMETERS(note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 9 td(on) 9 ns VDS =-16V,VGS =0V,f =1MHz SWITCHING PARAMETERS (note 4) Turn-on delay time (note 3) Turn-on rise time (note 3) Turn-off delay time (note 3) Turn-off fall time (note 3) tr VDD=-4.5V,VGS=-10V, 5.8 ns td(off) ID=-200mA,RGEN=10Ω 32.7 ns 20.3 ns tf Notes : 1.Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse width=300μs, duty cycle≤2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Graranted by design，not subject to producting. www.jscj-elec.com 2 Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV Output Characteristics Transfer Characteristics -3.0 -2.5 VGS=-4V,-5V VDS=-3V Ta=25℃ (A) -2.0 VGS=-2.5V DRAIN CURRENT DRAIN CURRENT Ta=25℃ ID -2.0 ID (A) VGS=-3V Pulsed -2.5 Pulsed VGS=-2V -1.5 -1.0 Ta=100℃ -1.5 -1.0 VGS=-1.5V -0.5 -0.5 -0.0 -0.0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE VDS -5 -0 (V) -1 -2 -3 GATE TO SOURCE VOLTAGE VGS RDS(ON) —— VGS RDS(ON) —— ID 1200 1000 Ta=25℃ 1100 -4 (V) Pulsed Pulsed 900 800 (m) VGS=-1.8V 900 800 RDS(ON) 1000 700 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) ID=-1A 700 VGS=-2.5V 600 500 Ta=100℃ 600 500 Ta=25℃ 400 400 VGS=-4.5V 300 -0.5 300 -0.6 -0.7 -0.8 -0.9 DRAIN CURRENT -1.0 ID -1.1 -1.2 -1 (A) -2 -3 -4 GATE TO SOURCE VOLTAGE VGS -5 (V) Threshold Voltage IS —— VSD -2 -0.8 Pulsed -0.6 VTH Ta=100℃ Ta=25℃ -0.1 -0.01 -0.0 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) -1 -1.0 -1.2 ID=-250uA -0.4 -0.2 -0.0 25 -1.4 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.0 WBFBP-03E 3DFNDJH2XWOLQH'LPHQVLRQV Symbol A A1 D E D1 E1 b b1 e e1 L L1 L2 Dimensions In Millimeters Min. Max. 0.450 0.550 0.010 0.100 0.950 1.050 0.550 0.650 0.450REF. 0.450REF. 0.270 0.370 0.100 0.200 0.635REF. 0.300 0.400 0.200 0.300 0.050REF. 0.270 0.370 Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.037 0.041 0.022 0.026 0.018REF. 0.018REF. 0.011 0.015 0.004 0.008 0.025REF. 0.012 0.016 0.008 0.012 0.002REF. 0.011 0.015 WBFBP-03E6XJJHVWHG3DG/D\RXW NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0 WBFBP-03E(1.0×0.6×0.5) Tape and Reel WBFBP-03E(1.0×0.6×0.5) Embossed Carrier Tape P1 d C A B F W E P0 Packaging Description: WBFBP-03E(1.0×0.6×0.5) parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 10,000 units per 7" or 17.8cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). P a A A-A Dimensions are in millimeter Pkg type a B C d E F P0 P P1 W WBFBP-03E (1.0×0.6×0.5) 0.66 1.15 0.66 Ø1.50 1.75 3.50 4.00 2.00 2.00 8.00 WBFBP-03E(1.0×0.6×0.5) Tape Leader and Trailer Trailer Tape 100±4 Empty Pockets Leader Tape 200±4 Empty Pockets Components WBFBP-03E(1.0×0.6×0.5) Reel D I G W2 3000 H 2500 2000 1500 1000 D2 D1 500 W1 Dimensions are in millimeter Reel Option D D1 D2 G H I W1 W2 7''Dia Ø178.00 54.40 13.00 R78.00 R25.60 R6.50 9.50 12.30 G.W.(kg) REEL Reel Size Box Box Size(mm) Carton Carton Size(mm) 10000 pcs 7 inch 100,000 pcs 203×203×195 400,000 pcs 438×438×220 www.jscj-elec.com 5 Rev. - 1.0