CJAB25SN06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3×3.3-8L Plastic-Encapsulate MOSFETS CJAB25SN06 N-Channel Power MOSFET ID RDS(on)TYP V(BR)DSS 13.5mΩ@10V 65 V PDFNWB3.3×3.3-8L 25A 23.0mΩ@4.5V DESCRIPTION The CJAB25SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  High Power and current handing capability  Load switch  High density cell design for ultra low RDS(ON)  Lead free product is acquired  Excellent package for good heat dissipation APPLICATIONS  SMPS and general purpose applications  Uninterruptible Power Supply  Hard switched and high frequency circuits  Power management MARKING EQUIVALENT CIRCUIT CJAB25SN06 = Part No. CJAB 25SN06 XX 8 D 7 D 6 D D 5 Solid dot = Pin1 indicator XX = Code 2 1 S 3 S 4 S G MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS +20/-12V V Continuous Drain Current ID ① 25 A Pulsed Drain Current IDM ② 100 A PD ⑤ 1.5 W 83.3 ℃/W Power Dissipation Thermal Resistance from Junction to Ambient RθJA ⑤ Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =65V, VGS =0V Gate-body leakage current IGSS VDS =0V, VGS =+20/-12V Min Typ Max Unit Off characteristics Drain-source breakdown voltage On characteristics 65 V 1 µA ±100 nA 1.5 2.5 V VGS =10V, ID =12A 13.5 16 mΩ VGS =4.5V, ID =5A 23.0 30 mΩ VDS =10V, ID =3A 4.7 ③ Gate-threshold voltage VGS(th) Static drain-source on-sate resistance RDS(on) Forward transconductance Dynamic characteristics gFS VDS =VGS, ID =250µA 1.0 S ③④ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Switching characteristics VDS = 30V,VGS = 0V, f = 1MHz f =1MHz 648 1300 239 380 22 60 0.4 pF Ω ③④ Total gate charge Qg Gate-source charge Qgs Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time 13.8 22 1.4 3 Qgd 4.7 9 td(on) 8 16 VDS=30V,ID=1A, 12 24 VGS=10V,RG=3.3Ω 25 50 18 36 VDS=30V, VGS=10V, ID=12A tr td(off) tf nC ns Drain-Source Diode Characteristics Drain-source diode forward voltage Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD IS ③ VGS =0V, IS=10A ① ISM ② 1.0 V 25 A 100 A Notes: 1.TC=25℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 4.Guaranteed by design, not subject to production. 5.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Transfer Characteristics Output Characteristics 20 25 Pulsed Ta=25℃ VDS=5V Pulsed VGS=10V,8V,6V,4.5V,4V (A) 15 Ta=25℃ ID 15 DRAIN CURRENT DRAIN CURRENT ID (A) 20 VGS=3.5V 10 10 5 VGS=3V 5 0 0 0 1 3 2 DRAIN TO SOURCE VOLTAGE 4 VDS 5 0 1 (V) 3 2 4 GATE TO SOURCE VOLTAGE VGS 5 (V) RDS(ON)—— VGS RDS(ON) —— ID 40 50 Ta=25℃ Ta=25℃ Pulsed Pulsed (m) 30 ON-RESISTANCE ON-RESISTANCE RDS(ON) VGS= 4.5V RDS(ON) (m) 40 20 VGS= 10V 10 ID=12A 30 20 10 0 0 2 4 8 12 16 DRAIN CURRENT ID 20 24 25 0 (A) 2 4 8 6 10 GATE TO SOURCE VOLTAGE IS —— VSD VGS 12 Threshold Voltage 2.5 30 Ta=25℃ Ta=25℃ Pulsed Pulsed 2.0 THRESHOLD VOLTAGE VTH IS (A) (V) 10 SOURCE CURRENT 14 (V) 1 0.1 0.1 1 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.5 1.0 0.5 0.0 25 2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.0 Typical Characteristics Gate Charge Capacitances 10 3000 VDS=30V f=1MHz Pulsed ID =12A 1000 Pulsed 8 VGS C (pF) Coss GATE TO SOURCE VOLTAGE CAPACITANCE (V) Ciss 100 Crss 10 1 0.1 4 2 0 1 DRAIN TO SOURCEVOLTAGE www.jscj-elec.com 6 10 50 0 VDS (V) 5 10 15 GATE CHARGE (nC) 4 Rev. - 1.0 Symbol A A1 A2 D D1 E E1 E2 b e L L1 L2 L3 H θ Dimensions In Millimeters Min. Max. 0.650 0.850 0.152 REF. 0~0.05 2.900 3.100 2.300 2.600 2.900 3.100 3.150 3.450 1.535 1.935 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0~0.100 0~0.100 0.315 0.515 9° 13° Dimensions In Inches Min. Max. 0.026 0.033 0.006 REF. 0~0.002 0.114 0.122 0.091 0.102 0.114 0.122 0.124 0.136 0.060 0.076 0.008 0.016 0.022 0.030 0.012 0.020 0.007 0.019 0~0.004 0~0.004 0.012 0.020 9° 13° NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 1.0 PDFNWB3.3×3.3-8 L PDFNWB3.3×3.3-8 L PDFNWB3.3×3.3-8 L PDFNWB3.3×3.3-8L PDFNWB3.3×3.3-8 L ● PDFNWB3.3×3.3-8 L www.jscj-elec.com 6 Rev. - 1.0