CJAB35N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3×3.3-8L Plastic-Encapsulate MOSFETS CJAB35N03 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX 7mΩ@10V 30 V 12mΩ@4.5V ID PDFNWB3.3×3.3-8L 35A DESCRIPTION The CJAB35N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  High density cell design for ultra low RDS(ON)  Excellent package for good heat dissipation  Fully characterized avalanche voltage and  Special process technology for high ESD capability current  Good stability and uniformity with high EAS APPLICATIONS  High side switch in POL DC/DC converter MARKING  Secondary side synchronous rectifier EQUIVALENT CIRCUIT D 8 D 7 D 6 D 5 CJAB35N03 = Part No. CJAB 35N03 XX Solid dot=Pin1 indicator XX=Code 2 1 S 3 S 4 S G ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 ① Continuous Drain Current ID Pulsed Drain Current IDM ② 120 Maximum Power Dissipation PD ① 35 Unit V A 45 W Single Pulsed Avalanche Energy EAS ③ 150 mJ Thermal Resistance from Junction to Case ① RθJC 2.7 ℃/W Thermal Resistance from Junction to Ambient RθJA 83.3 ℃/W ⑥ Junction Temperature TJ 150 Storage Temperature TSTG -55~ +150 Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) www.jscj-elec.com 1 TL ℃ 260 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit V(BR) DSS VGS = 0V, ID =250uA 30 Zero gate voltage drain current IDSS VDS =30V, VGS =0V 1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA VGS(th) VDS =VGS, ID =250uA 1.4 3.0 V VGS =4.5V, ID =10A 8.0 12 mΩ VGS =10V, ID =12A 5.3 7 mΩ Off characteristics Drain-source breakdown voltage V On characteristics ④ Gate-threshold voltage Static drain-source on-sate resistance Dynamic characteristics RDS(on) 1.0 ④⑤ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Switching characteristics VDS =15V,VGS =0V, f =1MHz 2013 pF 257 228 f =1MHz Ω 2.1 ④⑤ Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd 9.1 Turn-on delay time td(on) 9 Turn-on rise time Turn-off delay time Turn-off fall time VGS=10V, VDS=15V, ID=12A 40 tr VDS=15V,ID=12A , 26 td(off) VGS=10V,RG=6Ω 35 tf nC 5.1 ns 8 Drain-Source Diode Characteristics Drain-source diode forward voltage VSD ④ Continuous drain-source diode forward current IS ① Pulsed drain-source diode forward current ISM VGS =0V, IS=12A ② 1.2 V 35 A 120 A Notes: 1.7& ℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=15V,VGS=10V, L=0.1mH, Rg=25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Transfer Characteristics Output Characteristics 40 35 Pulsed Ta=25℃ Pulsed 30 (A) 25 Ta=25℃ ID VGS=3.5V DRAIN CURRENT DRAIN CURRENT VDS=8V 30 ID (A) VGS=10V,6V,5V,4V 20 20 15 10 10 VGS=3V 5 0 0 0 1 2 3 DRAIN TO SOURCE VOLTAGE 4 VDS 5 0 1 (V) 2 3 4 GATE TO SOURCE VOLTAGE VGS 5 (V) RDS(ON)—— VGS RDS(ON) —— ID 14 20 Ta=25℃ Ta=25℃ Pulsed Pulsed 12 (m) RDS(ON) 10 VGS= 4.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 16 8 VGS= 10V 6 12 ID=12A 8 ID=10A 4 4 2 0 5 10 20 DRAIN CURRENT 30 ID 0 35 (A) 2 4 6 8 10 GATE TO SOURCE VOLTAGE IS —— VSD VGS 12 Threshold Voltage Ta=25℃ Ta=25℃ Pulsed (V) Pulsed 2.0 VTH 10 THRESHOLD VOLTAGE IS (A) 15 2.5 40 SOURCE CURRENT 14 (V) 1 0.1 0.1 1 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.5 1.0 0.5 0.0 25 2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.0 Typical Characteristics Gate Charge Capacitances 10000 10 f=1MHz Pulsed VDS=15V (V) Pulsed 8 VGS 1000 GATE TO SOURCE VOLTAGE CAPACITANCE C (pF) Ciss Coss Crss 100 10 0.1 4 2 0 1 DRAIN TO SOURCEVOLTAGE www.jscj-elec.com 6 10 30 0 VDS (V) 5 10 15 20 25 30 35 40 GATE CHARGE (nC) 4 Rev. - 1.0 Symbol A A1 A2 D D1 E E1 E2 b e L L1 L2 L3 H θ Dimensions In Millimeters Min. Max. 0.650 0.850 0.152 REF. 0~0.05 2.900 3.100 2.300 2.600 2.900 3.100 3.150 3.450 1.535 1.935 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0~0.100 0~0.100 0.315 0.515 9° 13° Dimensions In Inches Min. Max. 0.026 0.033 0.006 REF. 0~0.002 0.114 0.122 0.091 0.102 0.114 0.122 0.124 0.136 0.060 0.076 0.008 0.016 0.022 0.030 0.012 0.020 0.007 0.019 0~0.004 0~0.004 0.012 0.020 9° 13° NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 1.0  www.jscj-elec.com 6 Rev. - 1.0