CJAB40SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3×3.3-8L Plastic-Encapsulate MOSFETS CJAB40SN10 N-Channel Power MOSFET V(BR)DSS ID RDS(on)TYP 8.5mΩ@10V 100V 11mΩ@4.5V PDFNWB3.3×3.3-8L 40A DESCRIPTION The CJAB40SN10 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES  Load switch  Good stability and uniformity with high EAS  High density cell design for ultra low RDS(ON)   Fully characterized avalanche voltage and Excellent package for good heat dissipation  Uninterruptible Power Supply current APPLICATIONS  SMPS and general purpose applications  Hard switched and high frequency circuits EQUIVALENT CIRCUIT MARKING 8 CJAB 40SN10 XX D 7 D 6 D D 5 CJAB40SN10 = Part No. Solid dot=Pin1 indicator XX=Code 2 1 S 3 S 4 S G MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Limit Unit Drain-Source Voltage Parameter VDS 100 V Gate-Source Voltage VGS ±20 V ① Continuous Drain Current ID 40 A Pulsed Drain Current IDM② 160 A Single Pulsed Avalanche Energy EAS③ 80 mJ 1.5 W 83.3 ℃/W Power Dissipation PD Thermal Resistance from Junction to Ambient ① RθJA ⑥ Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit V(BR) DSS VGS = 0V, ID =250µA 100 Zero gate voltage drain current IDSS VDS =80V, VGS =0V 1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 1.8 2.2 V Static drain-source on-sate resistance RDS(on) VGS =10V, ID =12A 8.5 13 mΩ VGS =4.5V, ID =9A 11 17 mΩ 1460 2920 280 560 5.2 11 Off characteristics Drain-source breakdown voltage V ④ On characteristics 1.4 ④⑤ Dynamic characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Switching characteristics VDS =50V,VGS =0V, f =1MHz f =1MHz pF Ω 1.4 ④⑤ Total gate charge Qg Gate-source charge Qgs Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time 25 50 5.0 10 Qgd 6.5 13 td(on) 6.5 13 VDS=50V, VGS=10V, ID=20A tr VDS=50V,ID=20A, 4.5 9.0 td(off) VGS=10V,RG=10Ω 19 38 3.5 7.0 tf nC ns Drain-Source Diode Characteristics Drain-source diode forward voltage ④ 1.2 V ① 40 A ISM ② 160 A Reverse Recovery Time trr ④ Reverse Recovery Charge Qrr Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD IS ④ VGS =0V, IS=12A VR=50V, IF=20A, dIF/dt=500A/µs 42 ns 160 nC Notes: 1.TC=25℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=50V,VGS=10V, L=0.1mH, Rg=25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Output Characteristics 180 10V VGS= 7V VDS=5V Pulsed 150 25 (A) 120 (A) VGS= 5V ID ID VGS=4.5V 90 DRAIN CURRENT DRAIN CURRENT Transfer Characteristics 30 Pulsed 60 20 15 Ta=25℃ 10 VGS=2.5V 30 5 0 2 0 4 10 8 6 DRAIN TO SOURCE VOLTAGE VDS 0 (V) 0 1 2 Ta=25℃ (m) 16 RDS(ON) 14 12 VGS=4.5V 10 8 ON-RESISTANCE (m) RDS(ON) ON-RESISTANCE Pulsed ID=20A 18 Pulsed 16 VGS=10V 6 4 2 14 Ta=100℃ 12 10 Ta=25℃ 8 6 4 2 3 5 10 15 DRAIN CURRENT 20 ID 0 25 3 (A) 4 5 7 8 VGS 9 10 (V) Threshold Voltage IS —— VSD 2.5 Pulsed 2.0 VTH (V) 10 1 Ta=25℃ Ta=100℃ THRESHOLD VOLTAGE IS (A) 6 GATE TO SOURCE VOLTAGE 25 SOURCE CURRENT 4 (V) 20 18 0.1 0.01 1E-3 VGS RDS(ON)—— VGS RDS(ON) —— ID 10 0 3 GATE TO SOURCE VOLTAGE 0 200 400 600 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 800 1000 1200 VSD (mV) 1.5 ID=250uA 1.0 0.5 0.0 25 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.0 Symbol A A1 A2 D D1 E E1 E2 b e L L1 L2 L3 H θ Dimensions In Millimeters Min. Max. 0.650 0.850 0.152 REF. 0~0.05 2.900 3.100 2.300 2.600 2.900 3.100 3.150 3.450 1.535 1.935 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0~0.100 0~0.100 0.315 0.515 9° 13° Dimensions In Inches Min. Max. 0.026 0.033 0.006 REF. 0~0.002 0.114 0.122 0.091 0.102 0.114 0.122 0.124 0.136 0.060 0.076 0.008 0.016 0.022 0.030 0.012 0.020 0.007 0.019 0~0.004 0~0.004 0.012 0.020 9° 13° NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0