CJAC0410

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5×6-8L-A Plastic-Encapsulate MOSFETS CJAC0410 N Channel+P Channel MOSFET V(BR)DSS RDS(on)MAX ID PDFNWB5×6-8L-A 185mΩ@10V 100V 195mΩ@4.5V 4A 270mΩ@-10V -100V 330mΩ@-4.5V -4A DESCRIPTION The CJAC0410 provides excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON)  Excellent package for good heat dissipation Fully characterized avalanche voltage and current   APPLICATIONS  High-frequency switching and synchronous rectification DC/DC converter  MARKING EQUIVALENT CIRCUIT 8 CJAC 0410 XX CJAC0410= Part No. Solid dot=Pin1 indicator XX=Code 4 1 PIN 1 Maximum ratings (Ta=25℃ unless otherwise noted) Symbol Limit Unit N-MOSFET Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V 4.0 A A Parameter Continuous Drain Current ID ① Pulsed Drain Current IDM Single Pulsed Avalanche Energy EAS ③ ② 16 39 mJ P-MOSFET Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ID ① ±20 -4.0 Continuous Drain Current Pulsed Drain Current IDM Single Pulsed Avalanche Energy ② EAS ④ V V A -16 A 57 mJ 89.2 ℃/W 6.0 W Temperature and Thermal Resistance Thermal Resistance from Junction to Ambient RθJA ② Power Dissipation PD Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg TL -55 ~+150 260 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) www.jscj-elec.com 1 ℃ Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS N-Channel MOSFET ELECTRICAL CHARACTERISTICS, Ta=25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit V(BR) DSS VGS = 0V, ID =250µA 100 Zero gate voltage drain current IDSS VDS =100V, VGS =0V 1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 1.7 2.5 V Static drain-source on-sate resistance RDS(on) VGS =10V, ID =2A 160 185 mΩ VGS =4.5V, ID =1A 168 195 mΩ Off characteristics Drain-source breakdown voltage V On characteristics ⑤ Forward transconductance VDS =10V, ID =4.5A gFS 1.0 6 S Dynamic characteristics ⑤ ⑥ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Switching characteristics VDS =50V,VGS =0V, f =1MHz f =1MHz 894 1190 16 55 12 30 5 pF Ω ⑤⑥ Total gate charge Qg Gate-source charge Qgs Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time 13.4 21 2.9 6.0 Qgd 1.7 4.0 td(on) 1.6 3 6.6 13 11.5 22 3.6 7 VGS=10V,VDS=50 V, ID=2A VDD=30V,ID=1A tr VGS=10V,RG=3.3Ω , td(off) tf nC ns Drain-Source Diode Characteristics Drain-source diode forward voltage Continuous drain-source diode forward current Pulsed drain-source diode forward current www.jscj-elec.com VSD IS ⑤ 1.2 V ① 4 A ② 16 A ISM VGS =0V, IS=4A 2 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS P-Channel MOSFET ELECTRICAL CHARACTERISTICS, Ta=25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250µA -100 V Zero gate voltage drain current IDSS VDS =-100V, VGS =0V -1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA -1.5 -2.5 V VGS =-10V, ID =-3A 237 270 mΩ VGS =-4.5V, ID =-1.5A 252 330 mΩ VDS =10V, ID =5A 7.4 On characteristics ⑤ Gate-threshold voltage VGS(th) Static drain-source on-sate resistance RDS(on) Forward transconductance gFS VDS =VGS, ID =-250µA -1.0 S Dynamic characteristics ⑤ ⑥ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Switching characteristics VDS =-50V,VGS =0V, f =1MHz f =1MHz 783 1560 33 66 22 45 17 pF Ω ⑤⑥ Total gate charge Qg Gate-source charge Qgs Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time 10.9 22 1.5 3 Qgd 2.6 5.2 td(on) 11.6 23 VGS=-10V, VDS=-50V, ID=-1A tr VDD=-50V,ID=-1A 4.8 10 td(off) VGS=-10V,RG=6Ω , 35.8 72 18.8 38 tf nC ns Drain-Source Diode Characteristics Drain-source diode forward voltage Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD IS ⑤ -1.2 V ① -4 A ② -16 A ISM VGS =0V, IS=-4A Notes: 1.TC=25℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=50V,VGS=10V, L=0.1mH, Rg=25Ω Starting TJ = 25° ℃. 4.EAS condition: VDD=-50V,VGS=-10V, L=0.5mH, Rg=25Ω Starting TJ = 25°℃. 5.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 6.Guaranteed by design, not subject to production. www.jscj-elec.com 3 Rev. - 1.0 Typical Characteristics N-Channel MOS Transfer Characteristics Output Characteristics 10 Ta=25℃ 10 VDS=10V VGS=10V,6V,4V Pulsed 8 Pulsed (A) ID (A) ID 6 DRAIN CURRENT DRAIN CURRENT Ta=25℃ 8 VGS=3.5V 4 VGS=3V 2 0 0 1 2 VDS 4 2 3 DRAIN TO SOURCE VOLTAGE 6 0 4 0 1 (V) 2 3 4 GATE TO SOURCE VOLTAGE 5 VGS RDS(ON)—— VGS RDS(ON) —— ID 300 200 Ta=25℃ Ta=25℃ Pulsed Pulsed 270 ID=2A (m) RDS(ON) 180 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 190 VGS= 4.5V 170 VGS= 10V 160 150 1 ID=1A 240 210 180 150 2 DRAIN CURRENT 3 ID 120 3.5 2 (A) 4 6 GATE TO SOURCE VOLTAGE IS —— VSD VGS 8 (V) Threshold Voltage 3 30 Ta=25℃ Ta=25℃ Pulsed Pulsed THRESHOLD VOLTAGE VTH IS (A) (V) 10 SOURCE CURRENT 6 (V) 1 0.1 0.3 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1 0 25 2 1 2 VSD (V) 50 75 JUNCTION TEMPERATURE 4 100 TJ 125 (℃ ) Rev. - 1.0 Typical Characteristics P-Channel MOS Transfer Characteristics Output Characteristics -10 -10 Ta=25℃ VDS=-10V Pulsed Pulsed -8 Ta=25℃ -8 (A) ID ID (A) VGS= -10V,-6V,-4V,-3.5V DRAIN CURRENT DRAIN CURRENT -6 VGS=-3V -4 -2 0 -6 -4 -2 0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE -5 VDS 0 -6 0 (V) -1 -2 -4 VGS 400 Ta=25℃ Ta=25℃ Pulsed Pulsed (m) VGS= -4.5V 240 VGS= -10V 220 -1 -2 DRAIN CURRENT -3 ID ID=-3A 350 ID=-1.5A RDS(ON) 260 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 280 200 300 250 200 -3.5 0 (A) -2 -4 -6 -8 GATE TO SOURCE VOLTAGE IS —— VSD -10 VGS -10 (V) Threshold Voltage -2.5 Ta=25℃ Ta=25℃ Pulsed -2.0 THRESHOLD VOLTAGE VTH IS (A) (V) Pulsed SOURCE CURRENT -5 (V) RDS(ON)—— VGS RDS(ON) —— ID 300 -3 GATE TO SOURCE VOLTAGE -1 -0.1 -0.3 -1 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com -1.5 -1.0 -0.5 0.0 25 -2 VSD (V) 50 75 JUNCTION TEMPERATURE 5 100 TJ 125 (℃ ) Rev. - 1.0 PD FNWB5×6-8L-A Symbol A A3 D E D1 D2 E1 D3 E2 k b e L L1 H θ Dimensions In Millimeters Min. Max. 0.900 1.000 0.254 REF. 4.944 5.096 5.974 6.126 1.470 1.870 0.470 0.870 3.375 3.575 4.824 4.976 5.674 5.826 1.190 1.390 0.350 0.450 1.270TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° Dimensions In Inches Min. Max. 0.035 0.039 0.010REF. 0.195 0.201 0.235 0.241 0.058 0.074 0.019 0.034 0.133 0.141 0.190 0.196 0.223 0.229 0.047 0.055 0.014 0.018 0.050TYP. 0.022 0.028 0.017 0.023 0.023 0.029 10° 12° NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 6 Rev. - 1.0 PD FNWB5×6-8L-A PD F NWB5×6-8L-A PDFNWB5×6-8L-A PDFNWB5×6-8L-A PD FNWB5×6-8L-A PD FNWB5×6-8L-A www.jscj-elec.com 7 Rev. - 1.0