CJAC50P03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN:%5×6-8L Plastic-Encapsulate MOSFETS CJAC50P03 P-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID -50A     7mΩ@ -10V -30V PDFN:%5×6-8L DESCRIPTION The CJAC50P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  High density cell design for ultra low RDS(ON)  Excellent package for good heat dissipation  Fully characterized avalanche voltage and  Special process technology for high ESD current  capability Good stability and uniformity with high EAS APPLICATIONS  Battery and loading switching MARKING EQUIVALENT CIRCUIT D 8 CJAC50P03 = Part No. D 7 D 6 D 5 Solid dot=Pin1 indicator XXX=Date Code 1 S 2 S 3 S 4 G MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID(1) -50 A Pulsed Drain Current IDM -200 A 300 mJ 2 W 62.5 ℃/W Single Pulsed Avalanche Energy EAS Power Dissipation (2) PD Thermal Resistance from Junction to Ambient RθJA (1) Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ (1).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt (2).EAS condition: VDD=15V,L=0.5mH, RG=25Ω, Starting TJ = 25°C www.jscj-elec.com 1 Rev. - 1.1 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250µA -30 V Zero gate voltage drain current IDSS VDS =-30V, VGS =0V -1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =-250µA -1.5 -2.5 V Static drain-source on-sate resistance RDS(on) VGS =-10V, ID =-10A 4.4 7 mΩ gFS VDS =-10V, ID =-15A 20 On characteristics (note1) Forward transconductance -1.0 S Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 3590 VDS =-15V,VGS =0V, f =1MHz pF 695 665 Switching characteristics (note 2) Total gate charge Qg 84 VDS=-15V, VGS=-10V, Gate-source charge Qgs Gate-drain charge Qgd 25 Turn-on delay time td(on) 13 Turn-on rise time Turn-off delay time ID=-10A tr VDD=-15V,ID=-10A, 12 td(off) VGS=-10V,RG=6Ω 50 Turn-off fall time tf nC 11.7 ns 14 Drain-Source Diode Characteristics -1.2 V IS -50 A Pulsed drain-source diode forward current ISM -70 A Reverse Recovery Time trr TJ=25℃,IF=-10 A 45 ns Reverse Recovery Charge Qrr di/dt=100A/µs(Note1) 43 nC Drain-source diode forward voltage(note1) Continuous drain-source diode forward current(note3) VSD VGS =0V, IS=-10A -0.85 Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production. 3. Surface Mounted on FR4 Board, t ≤ 10 sec. www.jscj-elec.com 2 Rev. - 1.1 Typical Characteristics Transfer Characteristics Output Characteristics -70 -5 VDS=-10V Pulsed Pulsed VGS=-10V,-6V,-5V (A) -4 (A) -56 ID -42 DRAIN CURRENT DRAIN CURRENT ID VGS=-4.0V -28 -14 -3 TJ=125℃ TJ=25℃ -2 -1 VGS=-3.5V -0 -0.0 -0.5 -1.0 -1.5 -2.0 DRAIN TO SOURCE VOLTAGE VDS -0 -0.0 -2.5 -0.5 -1.0 (V) -1.5 -2.0 10 -4.0 -4.5 -5.0 (V) Pulsed ID=-10A 11 Pulsed 10 (m) 8 RDS(ON) 7 6 VGS=-10V 5 ON-RESISTANCE (m) -3.5 VGS 12 Ta=25℃ 9 RDS(ON) -3.0 RDS(ON)—— VGS RDS(ON) —— ID ON-RESISTANCE -2.5 GATE TO SOURCE VOLTAGE 4 3 2 9 8 7 Ta=100℃ 6 5 4 Ta=25℃ 3 2 1 1 0 -0.5 -10 -20 -30 DRAIN CURRENT ID -40 0 -4.0 -50 (A) -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 GATE TO SOURCE VOLTAGE VGS -8.5 -9.0 -9.5 -10.0 (V) Threshold Voltage IS —— VSD -3.0 -100 Pulsed -2.5 VTH Ta=100℃ -1 Ta=25℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) -10 -0.1 -0.01 -1E-3 -2.0 ID=-250uA -1.5 -1.0 -0.5 -0 -200 -400 -600 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com -800 -1000 -0.0 25 -1200 VSD (mV) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.1 Symbol A A3 D E D1 E1 D2 E2 k b e L L1 H θ Dimensions In Millimeters Min. Max. 0.900 1.000 0.254REF. 4.944 5.096 5.974 6.126 3.910 4.110 3.375 3.575 4.824 4.976 5.674 5.826 1.190 1.390 0.350 0.450 1.270TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° Dimensions In Inches Min. Max. 0.035 0.039 0.010REF. 0.195 0.201 0.235 0.241 0.154 0.162 0.133 0.141 0.190 0.196 0.223 0.229 0.047 0.055 0.014 0.018 0.050TYP. 0.022 0.028 0.017 0.023 0.023 0.029 10° 12° NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.1 www.jscj-elec.com 5 Rev. - 1.1