CJAC70P06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5×6-8L Plastic-Encapsulate MOSFETS CJAC70P06 P-Channel Power MOSFET ID RDS(on)TYP V(BR)DSS 7.6mΩ@-10V  -60V PDFNWB5×6-8L -70A 9.2mΩ@-4.5V  DESCRIPTION The CJAC70P06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  Battery switch  Good stability and uniformity with high EAS  Load switch  Excellent package for good heat dissipation  High density cell design for ultra low RDS(ON)  Special process technology for high ESD  Fully characterized avalanche voltage and capability current APPLICATIONS  SMPS and general purpose applications  Hard switched and high frequency circuits  Uninterruptible Power Supply EQUIVALENT CIRCUIT MARKING D 8 D 7 D 6 D 5 &-$&70P06 3DUW1R CJAC 70P06 XX 6ROLGGRW ;; 3LQLQGLFDWRU &RGH 1 S 2 S 3 S 4 G MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V ① Continuous Drain Current ID -70 A Pulsed Drain Current IDM② -280 A Single Pulsed Avalanche Energy EAS③ 320 mJ Power Dissipation 115 W RθJA⑥ 62.5 ℃/W ① 1.09 ℃/W -55 ~+150 ℃ PD Thermal Resistance from Junction to Ambient ① Thermal Resistance from Junction to Case RθJC Junction Temperature and Storage Temperature Range TJ Tstg www.jscj-elec.com 1 Rev. - 2.1 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate-body leakage current IGSS VDS =0V, VGS =±20V Gate-threshold voltage VGS(th) VDS =VGS, ID =-250µA Static drain-source on-sate resistance RDS(on) On characteristics VGS = 0V, ID =-250µA V -60 VDS =-48V, TJ =25℃ -1.0 VGS =0V TJ =125℃ -100 µA ±100 nA -1.5 -2.5 V VGS =-10V, ID =-20A 7.6 8.6 mΩ VGS =-4.5V, ID =-10A 9.2 12 mΩ VDS =-10V, ID =-3A 17 ④ Forward transconductance gFS -1.0 S ④⑤ Dynamic characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Switching characteristics VDS =-30V,VGS =0V, f =1MHz f =1MHz 8600 12500 450 700 280 430 pF Ω 4.3 ④⑤ Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time Turn-off fall time 140 210 17 25 28 43 42 140 VDS=-48V,RL=0.75Ω, 200 400 VGS=-10V,ID=-1A 400 800 200 400 VGS=-10V, VDS=-48V, ID=-5A tr td(off) tf nC ns Drain-Source Diode Characteristics Drain-source diode forward voltage VSD Continuous drain-source diode forward IS ① ISM ② current Pulsed drain-source diode forward current ④ VGS =0V, IS=-12A -1.2 V -70 A -280 A Notes: 1.TC=25℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=-50V,VGS=-10V, L=0.1mH, Rg=25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25℃. www.jscj-elec.com 2 Rev. - 2.1 Typical Characteristics Transfer Characteristics Output Characteristics -70 -70 TJ=25℃ VDS=-12V Pulsed Pulsed -60 -60 (A) (A) VGS=-10V,-6V,-4V,-3.5V,-3V -50 ID ID -50 DRAIN CURRENT DRAIN CURRENT -40 -30 VGS=-2.5V -20 -10 0 -40 TJ=25℃ -30 -20 -10 0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE -4 VDS 0 -5 0 -1 (V) -2 -3 -4 GATE TO SOURCE VOLTAGE VGS -5 (V) RDS(ON)—— VGS RDS(ON) —— ID 14 25 TJ=25℃ ID=-20A Pulsed Pulsed 12 (m) (m) 20 VGS= -4.5V RDS(ON) RDS(ON) 10 ON-RESISTANCE ON-RESISTANCE 8 VGS= -10V 6 4 2 -5 -10 -15 DRAIN CURRENT 0 -2 -4 -6 -8 -10 GATE TO SOURCE VOLTAGE (A) VGS -12 -14 (V) Threshold Voltage -2.0 Pulsed -1.5 VTH (V) Pulsed -10 TJ=125℃ TJ=25℃ -1 -0.1 TJ=25℃ 5 0 -30 THRESHOLD VOLTAGE IS (A) ID -25 TJ=125℃ 10 IS —— VSD -100 SOURCE CURRENT -20 15 -1 -0.2 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com -1.0 -0.5 0.0 25 -2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 2.1 Typical Characteristics NORMALIZED TRAISIENT THERMAL IMPENDANCE NORMALIZED THERMAL IMPEDENCE, Zthjc (K/W) 10 In descending order D=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 D=TON/T 0.1 TJ,PK=TC+PDM×RθJC 0.01 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 SQUARE WAVE PULSE DURATION, tp (sec) MAXIMUM FORWARD BIASED SAFE OPERATING AREA 1000 IDM (A) 1us 100 DRAIN CURRENT -ID d on ite 10us m Li S RD 100us 10 1ms RθJC=1.09℃/W 10ms TC=25℃ DC Single pulse 1 0.1 BVdss 1 10 DRAIN TO SOURCE VOLTAGE www.jscj-elec.com 100 -VDS 200 (V) 4 Rev. - 2.1 Symbol A A3 D E D1 E1 D2 E2 k b e L L1 H θ Dimensions In Millimeters Min. Max. 0.900 1.000 0.254REF. 4.944 5.096 5.974 6.126 3.910 4.110 3.375 3.575 4.824 4.976 5.674 5.826 1.190 1.390 0.350 0.450 1.270TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° Dimensions In Inches Min. Max. 0.035 0.039 0.010REF. 0.195 0.201 0.235 0.241 0.154 0.162 0.133 0.141 0.190 0.196 0.223 0.229 0.047 0.055 0.014 0.018 0.050TYP. 0.022 0.028 0.017 0.023 0.023 0.029 10° 12° NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 2.1 www.jscj-elec.com 6 Rev. - 2.1