CJB3R9SN10B

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. TO-263-2L Plastic-Encapsulate MOSFETS CJB3R9SN10B N-Channel Power MOSFET RDS(on)TYP V(BR)DSS 3.3mΩ@10V 100V 4.5mΩ@4.5V TO-26 3-2L ID 150A DESCRIPTION The CJB3R9SN10B uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES   1. GATE 2. DRAIN 3. SOURCE 2 1 3 APPLICATIONS Low RDS(on) Low Gate Charge   MARKING High efficiency power supply Secondary synchronus rectifier EQUIVALENT CIRCUIT 3R9SN10B = Device code. Solid dot = Green molding compound device, if none, the normal device. XXXX = Code. MAXIMUM RATINGS ( TJ=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 150 A Pulsed Drain Current IDM ①② 600 A Single Pulsed Avalanche Energy EAS③ 520 mJ Power Dissipation PD① 200 W Thermal Resistance from Junction to Ambient RθJA⑤ 62.5 ℃/W Thermal Resistance from Junction to Case RθJC① 0.625 ℃/W TJ ,TSTG -55~+150 ℃ Operating Junction and Storage Temperature Range www.jscj-elec.com www.jscj-elec.com 11 ① Rev . Rev. - 1.1 - 1.0 MOSFET ELECTRICAL CHARACTERISTICS TJ=25℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit 100 - - V TJ =25℃ - - 1.0 TJ =125℃ - - 100 Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =1mA Zero gate voltage drain current IDSS VDS =80V, VGS =0V Gate-body leakage current IGSS VDS =0V, VGS =±20V - - ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 1.5 2.0 2.5 V Static drain-source on-sate resistance RDS(on) VGS =10V, ID =20A - 3.3 3.9 mΩ VGS =4.5V, ID =20A - 4.5 6.5 mΩ - 5445 - - 834 - - 35 - - 2.5 - - 49 - - 95 - - 16.5 - On characteristics µA ④ Dynamic characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg VDS =50V,VGS =0V, f =100kHz f =1MHz pF Ω Switching characteristics Total gate charge Qg Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd - 24 - Turn-on delay time td(on) - 26 - Turn-on rise time Turn-off delay time Turn-off fall time VGS=4.5V, VDD=50V, ID=20A VGS=10V, VDD=50V, ID=20A nC tr VDD=50V, VGS=10V, - 39 - td(off) RL=10.5Ω , Rg=10Ω - 170 - - 95 - - - 1.3 V ① - - 150 A ①② - - 600 A - 70 - ns - 165 - nC tf ns Drain-Source Diode Characteristics Drain-source diode forward voltage Continuous drain-source diode forward current VSD IS Pulsed drain-source diode forward current ISM Reverse recovery time trr Reverse recovery charge Qrr ④ VGS =0V, IS=20A diS/dt = 100A/μs, IS = 20A, VDD = 50V Notes: 1.TC=25°℃. 2.Limited only by maximum temperature allowed. 3.VDD=50V,VGS=10V, L=0.5mH, Rg=25Ω Starting TJ= 25°℃. 4.Pulse Test : Pulse Width≤380µs, duty cycle ≤2%. 5.Device mounted on 1 in2 FR-4 board with 2oz. single-sided Copper, in a still air environment with TA=25 ℃. www.jscj-elec.com www.jscj-elec.com 2 2 Rev . - 1.1 Rev. - 1.0 Typical Characteristics (TJ = 25℃, unless otherwise specified) Output Characteristics Transfer Characteristics 150 150 VDS = 40V VGS = 10V, 8V, 6V (A) ID DRAIN CURRENT DRAIN CURRENT ID (A) VGS = 4V 100 VGS = 3.5V 50 100 TJ = 150℃ 50 TJ = 25℃ VGS = 3V 0 0 1 2 3 DRAIN TO SOURCE VOLTAGE VDS 0 0.0 4 (V) 4.5 VGS 6.0 (V) (m) 20 6 ID = 20A 15 RDS(ON) VGS = 4.5V RDS(ON) 4 ON RESISTANCE (m) 3.0 On Resistance vs. Gate-Source Bias On Resistance vs. Drain Current 8 ON RESISTANCE 1.5 GATE TO SOURCE VOLTAGE VGS = 10V 2 10 TJ = 150℃ 5 TJ = 25℃ 0 5 10 15 DRAIN CURRENT 20 ID 0 25 0 (A) On Resistance vs. Junction Temperature 6 9 VGS 12 (V) Gate-Source Threshold Voltage 3.0 VGS = 10V ID = 20A VTH (V) 2.5 1.5 THRESHOLD VOLTAGE NORMALIZED ON RESISTANCE RDS(ON) (100%) 2.0 3 GATE TO SOURCE VOLTAGE 1.0 0.5 2.0 1.5 1.0 0.5 0.0 -75 -50 -25 0 25 50 75 JUNCTION TEMPERATURE www.jscj-elec.com www.jscj-elec.com 100 125 150 0.0 25 175 TJ (℃ ) 50 75 100 JUNCTION TEMPERATURE 3 3 125 TJ 150 (℃ ) Rev . - 1.1 Rev. - 1.0 Typical Characteristics (TJ = 25℃, unless otherwise specified) Gate Charge Typical Capacitances 10000 10 f = 100kHz VDS = 50V ID = 20A VGS (V) Ciss 1000 GATE TO SOURCE VOLTAGE CAPACITANCE C (pF) Coss Crss 100 10 0.1 1 DRAIN TO SOURCE VOLTAGE 6 4 2 0 50 10 8 0 25 VDS (V) 50 75 100 GATE CHARGE (nC) Maximum Safe Operating Area Source-Drain Diode Forward Characteristics 1000 150 100 ) (o n IDM d ite Lim ID (A) TJ = 150℃ DRAIN CURRENT SOURCE CURRENT IS (A) R DS 10 TJ = 25℃ 1μs 100 10μs 100μs 10 1ms 10ms RthJC = 0.625℃/W DC TC = 25℃ 1 0.0 0.3 0.6 0.9 SOURCE TO DRAIN VOLTAGE 1.2 1 1.5 Single pulse BVDSS 1 10 VSD (V) 100 DRAIN TO SOURCE VOLTAGE 200 VDS (V) Transient Thermal Impedance, Junction-Case 10 NORMALIZED THERMAIL IMPEDANCE JUNCTION-CASE ZthJC In descending order D = 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 D (duty cycle) = TON/ T 0.1 RthJC = 0.625℃/W TJ,PK = TC + PDM × ZthJC × RthJC 0.01 1E-6 1E-5 1E-4 1E-3 0.01 RECTANGULAR PULSE DURATION www.jscj-elec.com www.jscj-elec.com 4 4 0.1 1 10 100 tp (s) Rev . - 1.1 Rev. - 1.0 TEST CIRCUIT AND WAVEFOMRS Gate Charge VGS Qg VDC VDD Rg Qgd Qgs DUT Pulse Gneerator Charge Resistive Load Switching Time 90% VGS Rg VDS RL VDS DUT VDD 10% Pulse Gneerator VGS td(on) td(off) tr ton tf toff Un-clamped Inductive Load Switching EAS = 1/2 × L × IAS2 L VDS V(BR)DSS VDS VDD ID A Rg VDD VGS IAS DUT ID Pulse Gneerator VGS Drain-Source Body Diode Reverse Recovery VDS+ IS VDS- Rg1 DUT IS A VDD L VDD Rg2 0 10% IFSM VDS Pulse Gneerator Qrr dIS/dt trr www.jscj-elec.com www.jscj-elec.com 5 5 IFSM Rev . - 1.1 Rev. - 1.0 Symbol Dimensions In Millimeters Min. Max. 4.470 4.670 0.000 0.150 1.120 1.420 0.710 0.910 1.170 1.370 0.310 0.530 1.170 1.370 10.010 10.310 8.500 8.900 2.540 TYP. 4.980 5.180 14.940 15.500 4.950 5.450 2.340 2.740 1.300 1.700 0° 8° 5.600 REF. Dimensions In Inches Min. Max. 0.176 0.184 0.000 0.006 0.044 0.056 0.028 0.036 0.046 0.054 0.012 0.021 0.046 0.054 0.394 0.406 0.335 0.350 0.100 TYP. 0.196 0.204 0.588 0.610 0.195 0.215 0.092 0.108 0.051 0.067 0° 8° 0.220REF. 8.50 3 . 00 A A1 B b b1 c c1 D E e e1 L L1 L2 L3 Φ V 3 . 00 8.40 1.20 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com www.jscj-elec.com 6 6 Rev .Rev. - 1.1- 1.0 TO-263-2L Tape and Reel TO-263-2L Embossed Carrier Tabe P0 C F W A A A B E P1 d Packaging Description: TO-263-2L parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Hear Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 800 units per 13’’ or 33.0 cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). P A-A Dimensions are in millimeter Pkg type A B C d E F P0 P P1 W TO-263 10.80 16.13 5.21 Φ1.55 1.75 11.50 4.00 16.00 2.00 24.00 TO-263-2L Tape Leader and Trailer Trailer Tape Trailer Tape Components 25±1 Empty Pockets 25±1 Empty Pockets TO-263-2L Reel D1 W1 I D2 W2 D Dimensions are in millimeter Reel 13'' Dia Reel 800 pcs D D1 D2 W1 W2 I 330.00 100.00 Φ21.00 24.40 30.40 Φ13.00 Reel Size Box Box Size(mm) Carton Carton Size(mm) 13 inch 1600 pcs 360×360×65 8000 pcs 378×358×382 www.jscj-elec.com www.jscj-elec.com 7 X Rev . - 1.1 Rev . - 1.0