CJBD3020

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3×3.3-8L-B Plastic-Encapsulate MOSFETS CJBD3020 N-Channel Power MOSFET V(BR)DSS RDS(on)TYP 9.5mΩ@10V 30 V 14.5mΩ@4.5V ID PDFNWB3.3×3.3-8L-B 20A 8 DESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications 1 2 3 7 D2 6 5 G2 4 S2 G1 D2 D1 D1 S1 FEATURES  Battery switch  Good stability and uniformity with high EAS  Load switch  Excellent package for good heat dissipation  High density cell design for ultra low RDS(ON)  Special process technology for high ESD  Fully characterized avalanche voltage and capability current APPLICATIONS  SMPS and general purpose applications  Uninterruptible Power Supply  Hard switched and high frequency circuits MARKING D1 D1 D2 D2 D3020 xx EQUIVALENT CIRCUIT D3020=Part No. Solid dot=Pin1 indicator XX=Date Code S1 G1 S2 G2 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 20 A Pulsed Drain Current IDM 100 A 70 mJ PD 1.5 W RθJA 83.3 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ Single Pulsed Avalanche Energy EAS Power Dissipation Thermal Resistance from Junction to Ambient (1) (1).EAS condition: VDD=15V,L=0.14mH, RG=25Ω, Starting TJ = 25°C (2).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =30V, VGS =0V 1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 1.8 3.0 V Static drain-source on-sate resistance RDS(on) VGS =10V, ID =10A 9.5 15 mΩ VGS =4.5V, ID =10A 14.5 20 mΩ Off characteristics Drain-source breakdown voltage 30 V On characteristics (note1) Forward transconductance gFS VDS =5V, ID =20A 1.0 15 S Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS =15V,VGS =0V, f =1MHz 823 pF 138 100 Switching characteristics (note 2) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time Turn-off fall time VDS=15V, VGS=10V, ID=9A 14 nC 3.5 4.5 10 tr VDD=15V,VGS=10V, 8 td(off) RL=1.8Ω,RG=1.8Ω 30 tf ns 5 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD VGS =0V, IS=10A 1.2 V IS 20 A ISM 100 A Reverse Recovery Time trr TJ = 25°C, IF = 10A 22 35 ns Reverse Recovery Charge Qrr di/dt = 100A/μs(Note1) 12 20 nC Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Output Characteristics 30 10V Transfer Characteristics 30 VDS=5V Pulsed VGS= 5V Pulsed 25 25 (A) ID 20 DRAIN CURRENT DRAIN CURRENT ID (A) VGS= 4V VGS=3V 15 10 5 0 1 2 3 DRAIN TO SOURCE VOLTAGE 4 VDS 15 Ta=25℃ 10 5 VGS=2.5V 0 20 0 5 0 1 (V) 2 Pulsed (m) 16 12 RDS(ON) 14 VGS=10V 10 ON-RESISTANCE (m) RDS(ON) ON-RESISTANCE Pulsed ID=10A 18 16 8 6 4 2 0 Ta=100℃ 14 12 10 Ta=25℃ 8 6 4 2 5 3 10 15 DRAIN CURRENT 20 ID 0 25 3 (A) 4 5 8 VGS 9 10 (V) 2.5 Pulsed 2.0 VTH (V) 10 1 Ta=25℃ Ta=100℃ THRESHOLD VOLTAGE IS (A) 7 Threshold Voltage IS —— VSD SOURCE CURRENT 6 GATE TO SOURCE VOLTAGE 25 0.1 0.01 1E-3 4 (V) 20 Ta=25℃ 18 VGS RDS(ON)—— VGS RDS(ON) —— ID 20 3 GATE TO SOURCE VOLTAGE 0 200 400 600 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 800 1000 1.0 0.5 0.0 25 1200 VSD (mV) ID=250uA 1.5 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.0 PDFNWB3.3×3.3-8 L Symbol A A1 A2 D D1 D2 E E1 E2 b e L L1 L2 L3 H θ Dimensions In Millimeters Min. Max. 0.650 0.850 0.152 REF. 0~0.05 2.900 3.100 0.935 1.135 0.280 0.480 2.900 3.100 3.150 3.450 1.535 1.935 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0~0.100 0~0.100 0.315 0.515 9° 13° Dimensions In Inches Min. Max. 0.026 0.033 0.006 REF. 0~0.002 0.114 0.122 0.037 0.045 0.011 0.019 0.114 0.122 0.124 0.136 0.060 0.076 0.008 0.016 0.022 0.030 0.012 0.020 0.007 0.019 0~0.004 0~0.004 0.012 0.020 9° 13° NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0 PDFNWB3.3×3.3-8 L-B PDFNWB3.3×3.3-8 L-B PDFNWB3.3×3.3-8 L-B PDFNWB3.3×3.3-8L-B PDFNWB3.3×3.3-8 L-B PDFNWB3.3×3.3-8 L-B www.jscj-elec.com 5 Rev. - 1.0