CJBE5005

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB3X3-8L-K Plastic-Encapsulate MOSFETS CJBE5005 Dual N-Channel MOSFET V(BR)DSS DFNWB3×3-8L-K ID RDS(on)TYP 9.3 mΩ@ 4.5V 9.7mΩ@4.0V 20V 10A  10.0mΩ@3.8V 10.7mΩ@3.1V 12.5mΩ@2.5V DESCRIPTION The CJBE5005 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. Equivalent Circuit MARKING: Top Back MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 10 A Pulsed Drain Current IDM * 60 A Thermal Resistance from Junction to Ambient RθJA 83.3 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ Continuous Drain Current www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID = 250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA VGS =±8V, VDS = 0V ±10 µA 1 V Gate threshold voltage (note 1) Drain-source on-resistance (note 1) VGS(th) RDS(on) VDS =VGS, ID =250µA 20 V 0.4 VGS =4.5V, ID =5A 8 9.3 11.5 mΩ VGS =4.0V, ID =5A 8.2 9.7 12.5 mΩ VGS =3.8V, ID =5A 8.5 10.0 13 mΩ VGS =3.1V, ID =5A 9 10.7 14 mΩ VGS =2.5V, ID =5A 9.5 12.5 17 mΩ 9 36 Forward tranconductance (note 1) gFS VDS =5V, ID =7A Diode forward voltage(note 1) VSD IS=1A, VGS = 0V S 1 V DYNAMIC PARAMETERS (note 2) 1700 pF 230 pF Crss 200 pF Total gate charge Qg 17 nC Gate-source charge Qgs 1.5 nC Gate-drain charge Qgd 4.7 nC td(on) 2.5 ns VGS=5V,VDD=10V, 7.2 ns RL=1.35Ω,RGEN=3Ω 49 ns 108 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance VDS =10V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V,ID =7A SWITCHING PARAMETERS(note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Drain-Source Diode Characteristics Diode Forward Current IS - - 8.0 A Notes : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Output Characteristics 25 Transfer Characteristics 10 Pulsed VDS=16V VGS=10V、3.0V、2V Pulsed 20 ID 15 DRAIN CURRENT DRAIN CURRENT ID (A) (A) 8 VGS=1.5V 10 5 6 4 Ta=100℃ Ta=25℃ 2 VGS=1.2V 0 0 2 4 6 DRAIN TO SOURCE VOLTAGE VDS 0 0.0 10 8 0.6 0.8 1.0 1.2 GATE TO SOURCE VOLTAGE ID RDS(ON) —— 0.4 0.2 (V) 1.4 VGS RDS(ON)—— VGS 100 Ta=25℃ Ta=25℃ 18 (mΩ) 16 RDS(ON) ON-RESISTANCE (mΩ) RDS(ON) ON-RESISTANCE Pulsed ID=5A Pulsed 20 1.6 (V) VGS=2.5V 14 12 VGS=3.8V 10 80 60 40 Ta=100℃ 20 VGS=4.5V 8 6 1 2 3 4 5 6 DRAIN CURRENT IS —— ID 7 0 8 4 VSD 8 10 VGS 12 (V) 700 Pulsed VTH (mV) 1 Ta=100℃ THRESHOLD VOLTAGE 0.1 6 Threshold Voltage 750 Ta=25℃ IS (A) 2 GATE TO SOURCE VOLTAGE (A) 10 SOURCE CURRENT Ta=25℃ 0 Ta=25℃ 0.01 1E-3 650 600 ID=250uA 550 500 450 400 1E-4 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.0 350 25 1.2 50 75 JUNCTION TEMPERATURE VSD (V) 3 100 TJ 125 (℃ ) Rev. - 1.0 Typical Characteristics TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W 3 Maximum Safe Operating Area 2.5 2 Mounted on FR-4 board of 1 inch2 , 2oz 1.5 1 0.5 0 0 25 50 100 75 Ambient Temperature 125 TA 150 175 (℃ ) Drain-SourceVoltage V DS (V) CJBE5005 RDS(ON)—— TA 20 Static Source to Source On State Resistance, RDS(on) -mΩ 18 16 14 A, I S =3 V 2.5 3.8V A, I S =3 = VGS S= VG 3A, IS= 12 3.1V S= VG V , VGS 10 =4.5 A I S =3 8 6 4 2 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C www.jscj-elec.com 120 140 160 IT16977 4 Rev. - 1.0 DFNWB3×3-8 L-K DFNWB3×3-8 L-K NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 1.0