CJBM3020

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB3×3-8L-BE Plastic-Encapsulate MOSFETS CJBM3020 N-Channel Power MOSFET V(BR)DSS RDS(on)TYP 8.5mΩ@10V 30 V ID DFNWB3×3-8L-BE 8 20A 7 6 11.5mΩ@4.5V DESCRIPTION The CJBM3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications 1 2 3 5 4 FEATURES  Battery switch  Good stability and uniformity with high EAS  Load switch  Excellent package for good heat dissipation  High density cell design for ultra low RDS(ON)  Special process technology for high ESD  Fully characterized avalanche voltage and capability current APPLICATIONS  SMPS and general purpose applications  Uninterruptible Power Supply  Hard switched and high frequency circuits MARKING G2 S2 S2 S2 BM3020 xx G1 D1 D1 D1 EQUIVALENT CIRCUIT BM3020=Part No. Solid dot=Pin1 indicator XX=Date Code MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 20 A Pulsed Drain Current IDM 100 A 70 mJ PD 1.5 W RθJA 83.3 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ Single Pulsed Avalanche Energy EAS Power Dissipation Thermal Resistance from Junction to Ambient (1) (1).EAS condition: VDD=15V,L=0.14mH, RG=25Ω, Starting TJ = 25°C (2).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =30V, VGS =0V 1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 1.5 3.0 V Static drain-source on-sate resistance RDS(on) VGS =10V, ID =10A 8.5 14 mΩ VGS =4.5V, ID =10A 11.5 18 mΩ Off characteristics Drain-source breakdown voltage 30 V On characteristics (note1) Forward transconductance gFS VDS =5V, ID =20A 1.0 15 S Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS =15V,VGS =0V, f =1MHz 823 pF 138 100 Switching characteristics (note 2) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time Turn-off fall time VDS=15V, VGS=10V, ID=10A 13 nC 3 4.5 10 tr VDD=15V,VGS=10V, 8 td(off) RL=1.8Ω,RGEN=1.8Ω 30 tf ns 5 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD VGS =0V, IS=10A 1.2 V IS 20 A ISM 100 A Reverse Recovery Time trr TJ = 25°C, IF = 10A 22 35 ns Reverse Recovery Charge Qrr di/dt = 100A/μs(Note1) 12 20 nC Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Output Characteristics 30 10V Transfer Characteristics 30 VDS=5V Pulsed VGS= 5V Pulsed 25 25 (A) ID 20 DRAIN CURRENT DRAIN CURRENT ID (A) VGS= 4V VGS=3V 15 10 5 20 15 Ta=25℃ 10 5 VGS=2.5V 0 0 1 2 3 DRAIN TO SOURCE VOLTAGE 4 VDS 0 5 0 1 (V) 2 Pulsed (m) VGS=4.5V RDS(ON) 14 12 10 ON-RESISTANCE (m) RDS(ON) ON-RESISTANCE Pulsed ID=10A 18 16 8 VGS=10V 6 4 2 0 16 14 12 Ta=100℃ 10 8 Ta=25℃ 6 4 2 5 3 10 15 DRAIN CURRENT 20 ID 0 25 3 (A) 4 5 8 VGS 9 10 (V) 2.5 Pulsed 2.0 VTH (V) 10 1 Ta=25℃ Ta=100℃ THRESHOLD VOLTAGE IS (A) 7 Threshold Voltage IS —— VSD SOURCE CURRENT 6 GATE TO SOURCE VOLTAGE 25 0.1 0.01 1E-3 4 (V) 20 Ta=25℃ 18 VGS RDS(ON)—— VGS RDS(ON) —— ID 20 3 GATE TO SOURCE VOLTAGE 0 200 400 600 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 800 1000 1.0 0.5 0.0 25 1200 VSD (mV) ID=250uA 1.5 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.0 DFNWB3×3-8 L-BE Symbol A A1 b c D D1 e E E1 Dimensions In Millimeters Dimensions In Inches Min Max Min Max 0.700 0.800 0.028 0.032 0.000 0.350 0.203 0.050 0.450 REF. 0.000 0.014 0.008 0.002 0.018 REF. 2.900 3.100 2.300 2.500 0.650（BSC） 0.114 0.122 0.090 0.098 0.026（BSC） 0.114 0.035 0.016 0.011 K 2.900 0.890 0.420 0.270 0.350 0.014 REF. K1 0.060 REF. 0.002 REF. K2 0.250 REF. 0.010 REF. E2 L 3.100 1.090 0.620 0.370 REF. 0.122 0.043 0.024 0.015 DFNWB3×3-8 L-BE NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0 DFNWB3×3-8 L-BE DFNWB3×3-8 L-BE DFNWB3×3-8 L-BE DFNWB3×3-8L-BE DFNWB3×3-8 L-BE . DFNWB3×3-8 L-BE www.jscj-elec.com 5 Rev. - 1.0