CJCD2007

CJCD2007

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    DFNWB6L-C_2X3MM

  • 描述:

  • 数据手册
  • 价格&库存
CJCD2007 数据手册
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS CJCD2007 DFNWB2×3-6L-C Dual N-Channel MOSFET V(BR)DSS ID RDS(on)TYP 12.5 mΩ@4.5V 13 mΩ@4.0V 20V 8A  13.5 mΩ@3.8V 14.5 mΩ@ 3.1V 17mΩ@2.5V DESCRIPTION The CJCD2007 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. Equivalent Circuit MARKING: G2 S2 S2 D1/D2 G1 Top S1 S1 Back MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 8 A Pulsed Drain Current IDM * 45 A Thermal Resistance from Junction to Ambient RθJA 83.3 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ Continuous Drain Current www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID = 250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA VGS =±8V, VDS = 0V ±10 µA 1 V Gate threshold voltage (note 1) Drain-source on-resistance (note 1) VGS(th) RDS(on) 20 V VDS =VGS, ID =250µA 0.4 VGS =4.5V, I D = 3A 10 12.5 15 mΩ VGS =4.0V, ID =3A 10.5 13 16 mΩ VGS =3.8V, ID = 3A 10.8 13.5 16.5 mΩ VGS =3.1V, ID =3A 12 14.5 18 mΩ VGS =2.5V, ID = 3A 13 17 23 mΩ 9 Forward tranconductance (note 1) gFS VDS =5V, ID =7A Diode forward voltage(note 1) VSD IS=1A, VGS = 0V S 1 V DYNAMIC PARAMETERS (note 2) 1150 pF 185 pF Crss 145 pF Total gate charge Qg 15 nC Gate-source charge Qgs 0.8 nC Gate-drain charge Qgd 3.2 nC td(on) 6 ns VGS=5V,VDD=10V, 13 ns RL=1.35Ω,RGEN=3Ω 52 ns 16 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance VDS =10V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V,ID =7A SWITCHING PARAMETERS(note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Drain-Source Diode Characteristics Diode Forward Current IS - - 6.0 A Notes : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV Transfer Characteristics Output Characteristics 20 10 Pulsed 9 10V 3.0V VDS=16V Pulsed 8 15 (A) 7 ID ID (A) 2.0V DRAIN CURRENT DRAIN CURRENT 6 10 1.5V 5 4 Ta=100 3 5 2 VGS=1.2V 1 0 0 2 4 6 8 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 35 VDS 10 1.0 GATE TO SOURCE VOLTAGE ID RDS(ON) 50 —— 1.5 VGS (V) VGS Ta=25 Pulsed 40 35 ON-RESISTANCE 25 (m ) 30 RDS(ON) 45 RDS(ON) (m ) 0.5 (V) Ta=25 Pulsed ON-RESISTANCE Ta=25 0 0.0 VGS=2.5V 20 VGS=3.8V ID=7A 30 25 20 15 15 VGS=4.5V 10 10 1 2 3 4 DRAIN CURRENT 5 6 ID 7 2 4 6 8 GATE TO SOURCE VOLTAGE (A) IS —— VSD VGS 10 (V) Threshold Voltage 800 7 Ta=25 Pulsed VTH 700 0.1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (mV) 1 0.01 1E-3 1E-4 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.0 600 ID=250uA 500 400 25 1.2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 4 100 TJ ( 125 ) Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 3 Maximum Safe Operating Area 2.5 I D , Drain Current(A) PT - Total Power Dissipation - W 100 2 Mounted on FR-4 board of 1 inch2 , 2oz 1.5 1 0.5 10 0 50 25 75 100 125 Ambient Temperature 150 (℃ ) TA (O it 10 1m 1 0.03 0.1 175 S im 10 0.1 0 RD L N) 10 ms 0m s 0u s s DC VGS=4.5V Single Pulse TA=25 C 1 Drain-SourceVoltage 10 20 V DS (V) CJCD2007 RDS(ON)—— T A 28 Static Source to Source On State Resistance, RDS(on) -mΩ 26 24 3.8V 22 S= , VG A I S =3 .5V 20 18 V A, GS =2 3 IS= 16 1V 14 IS 12 , =3A VGS =3. V GS A, V I S =3 =4.5 10 8 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C www.jscj-elec.com 120 140 160 IT16977 4 Rev. - 1.0 Symbol A A1 A3 D E D1 E1 k b e L Dimensions In Millimeters Min. Max. 0.700 0.800 0.000 0.050 0.203REF. 1.950 2.050 2.950 3.050 1.450 1.550 1.650 1.750 0.200MIN. 0.200 0.300 0.500TYP. 0.300 0.400 Dimensions In Inches Min. Max. 0.028 0.031 0.000 0.002 0.008REF. 0.077 0.081 0.116 0.120 0.057 0.061 0.065 0.069 0.008MIN. 0.008 0.012 0.020TYP. 0.012 0.016 1.600 2.250 0.300 1.550 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 1.0
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