JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS
CJCD2007
DFNWB2×3-6L-C
Dual N-Channel MOSFET
V(BR)DSS
ID
RDS(on)TYP
12.5 mΩ@4.5V
13 mΩ@4.0V
20V
8A
13.5 mΩ@3.8V
14.5 mΩ@ 3.1V
17mΩ@2.5V
DESCRIPTION
The CJCD2007 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch,facilitated
by its common-drain configuration.
Equivalent Circuit
MARKING:
G2
S2
S2
D1/D2
G1
Top
S1
S1
Back
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID
8
A
Pulsed Drain Current
IDM *
45
A
Thermal Resistance from Junction to Ambient
RθJA
83.3
℃/W
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55~+150
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
TL
260
℃
Continuous Drain Current
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1
Rev. - 1.0
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR) DSS
VGS = 0V, ID = 250µA
Zero gate voltage drain current
IDSS
VDS =16V,VGS = 0V
1
µA
Gate-body leakage current
IGSS
VGS =±4.5V, VDS = 0V
±1
µA
VGS =±8V, VDS = 0V
±10
µA
1
V
Gate threshold voltage (note 1)
Drain-source on-resistance (note 1)
VGS(th)
RDS(on)
20
V
VDS =VGS, ID =250µA
0.4
VGS =4.5V, I D = 3A
10
12.5
15
mΩ
VGS =4.0V, ID =3A
10.5
13
16
mΩ
VGS =3.8V, ID = 3A
10.8
13.5
16.5
mΩ
VGS =3.1V, ID =3A
12
14.5
18
mΩ
VGS =2.5V, ID = 3A
13
17
23
mΩ
9
Forward tranconductance (note 1)
gFS
VDS =5V, ID =7A
Diode forward voltage(note 1)
VSD
IS=1A, VGS = 0V
S
1
V
DYNAMIC PARAMETERS (note 2)
1150
pF
185
pF
Crss
145
pF
Total gate charge
Qg
15
nC
Gate-source charge
Qgs
0.8
nC
Gate-drain charge
Qgd
3.2
nC
td(on)
6
ns
VGS=5V,VDD=10V,
13
ns
RL=1.35Ω,RGEN=3Ω
52
ns
16
ns
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
VDS =10V,VGS =0V,f =1MHz
VDS =10V,VGS =4.5V,ID =7A
SWITCHING PARAMETERS(note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
td(off)
tf
Drain-Source Diode Characteristics
Diode Forward Current
IS
-
-
6.0
A
Notes :
1.
Pulse Test : Pulse width≤300µs, duty cycle≤0.5%.
2.
Guaranteed by design, not subject to production testing.
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2
Rev. - 1.0
7\SLFDO&KDUDFWHULVWLFV
Transfer Characteristics
Output Characteristics
20
10
Pulsed
9
10V
3.0V
VDS=16V
Pulsed
8
15
(A)
7
ID
ID
(A)
2.0V
DRAIN CURRENT
DRAIN CURRENT
6
10
1.5V
5
4
Ta=100
3
5
2
VGS=1.2V
1
0
0
2
4
6
8
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
35
VDS
10
1.0
GATE TO SOURCE VOLTAGE
ID
RDS(ON)
50
——
1.5
VGS
(V)
VGS
Ta=25
Pulsed
40
35
ON-RESISTANCE
25
(m )
30
RDS(ON)
45
RDS(ON)
(m )
0.5
(V)
Ta=25
Pulsed
ON-RESISTANCE
Ta=25
0
0.0
VGS=2.5V
20
VGS=3.8V
ID=7A
30
25
20
15
15
VGS=4.5V
10
10
1
2
3
4
DRAIN CURRENT
5
6
ID
7
2
4
6
8
GATE TO SOURCE VOLTAGE
(A)
IS —— VSD
VGS
10
(V)
Threshold Voltage
800
7
Ta=25
Pulsed
VTH
700
0.1
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(mV)
1
0.01
1E-3
1E-4
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
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1.0
600
ID=250uA
500
400
25
1.2
VSD (V)
50
75
JUNCTION TEMPERATURE
3
4
100
TJ
(
125
)
Rev. - 1.0
7\SLFDO&KDUDFWHULVWLFV
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3
Maximum Safe Operating Area
2.5
I D , Drain Current(A)
PT - Total Power Dissipation - W
100
2
Mounted on FR-4 board of
1 inch2 , 2oz
1.5
1
0.5
10
0
50
25
75
100
125
Ambient Temperature
150
(℃ )
TA
(O
it
10
1m
1
0.03
0.1
175
S
im
10
0.1
0
RD
L
N)
10
ms
0m
s
0u
s
s
DC
VGS=4.5V
Single Pulse
TA=25 C
1
Drain-SourceVoltage
10
20
V DS (V)
CJCD2007 RDS(ON)—— T A
28
Static Source to Source
On State Resistance, RDS(on) -mΩ
26
24
3.8V
22
S=
, VG
A
I S =3
.5V
20
18
V
A,
GS
=2
3
IS=
16
1V
14
IS
12
,
=3A
VGS
=3.
V
GS
A, V
I S =3
=4.5
10
8
--60
--40 --20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
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120
140
160
IT16977
4
Rev. - 1.0
Symbol
A
A1
A3
D
E
D1
E1
k
b
e
L
Dimensions In Millimeters
Min.
Max.
0.700
0.800
0.000
0.050
0.203REF.
1.950
2.050
2.950
3.050
1.450
1.550
1.650
1.750
0.200MIN.
0.200
0.300
0.500TYP.
0.300
0.400
Dimensions In Inches
Min.
Max.
0.028
0.031
0.000
0.002
0.008REF.
0.077
0.081
0.116
0.120
0.057
0.061
0.065
0.069
0.008MIN.
0.008
0.012
0.020TYP.
0.012
0.016
1.600
2.250
0.300
1.550
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
www.jscj-elec.com
5
Rev. - 1.0
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