CJE3139K

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS CJE3139K P-Channel MOSFET V(BR)DSS ID RDS(on)MAX SOT-523 520 mΩ@-4.5V -20V -0.66A  700mΩ@-2.5V 950 mΩ(TYP)@-1.8V  1. GATE 2. SOURCE 3. DRAIN FEATURE z Lead Free Product is Acquired z Surface Mount Package z P-Channel Switch with Low RDS(on) z Operated at Low Logic Level Gate Drive APPLICATION z Load/Power Switching z Interfacing, Logic Switching z Battery Management for Ultra Small Portable Electronics Equivalent Circuit MARKING D G S Maximum ratings (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit Drain-Source Voltage VDS -20 V Typical Gate-Source Voltage VGS ±12 V Continuous Drain Current (note 1) ID -0.66 A Pulsed Drain Current IDM -1.2 A PD 150 mW RθJA 833 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ TL 260 ℃ (tp=10μs) Power Dissipation (note 1) Thermal Resistance from Junction to Ambient (note 1) Lead Temperature for Soldering Purposes(1/8” from case for 10 s) www.cj-elec.com 1 A,Sep,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-20V,VGS = 0V -1 Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±20 µA VGS(th) VDS =VGS, ID =-250µA -1.1 V VGS =-4.5V, ID =-1A 520 mΩ VGS =-2.5V, ID =-0.8A 700 mΩ Gate threshold voltage (note 2) Drain-source on-resistance (note 2) RDS(on) -20 V -0.35 µA VGS =-1.8V, ID =-0.5A 950 mΩ 1.2 S Forward transconductance (note 2) gFS VDS =-10V, ID =-0.54A Diode forward voltage VSD IS=-0.5A, VGS = 0V -1.2 V 113 170 pF 15 25 pF 15 pF DYNAMIC CHARACTERISTICS (note 4) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 9 td(on) 9 ns VDS =-16V,VGS =0V,f =1MHz SWITCHING CHARACTERISTICS (note 4) Turn-on delay time (note 3) Turn-on rise time (note 3) tr VGS=-4.5V,VDS=-10V, 5.8 ns Turn-off delay time (note3) td(off) ID =-200mA,RGEN=10Ω 32.7 ns 20.3 ns Turn-off fall time (note 3) tf Notes : 1. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse Width=300µs, Duty Cycle=2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Guaranteed by design, not subject to producting. www.cj-elec.com 2 A,Sep,2015 7\SLFDO&KDUDFWHULVWLFV Output Characteristics Transfer Characteristics -3.0 -2.5 VGS=-4V,-5V VDS=-3V Ta=25℃ (A) -2.0 VGS=-2.5V DRAIN CURRENT DRAIN CURRENT Ta=25℃ ID -2.0 ID (A) VGS=-3V Pulsed -2.5 Pulsed VGS=-2V -1.5 -1.0 Ta=100℃ -1.5 -1.0 VGS=-1.5V -0.5 -0.5 -0.0 -0.0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE VDS -5 -0 (V) -1 -2 -3 GATE TO SOURCE VOLTAGE VGS RDS(ON) —— VGS RDS(ON) —— ID 1200 1000 Ta=25℃ 1100 -4 (V) Pulsed Pulsed 900 800 (m) VGS=-1.8V 900 800 RDS(ON) 1000 700 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) ID=-1A 700 VGS=-2.5V 600 500 Ta=100℃ 600 500 Ta=25℃ 400 400 VGS=-4.5V 300 -0.5 300 -0.6 -0.7 -0.8 -0.9 DRAIN CURRENT -1.0 ID -1.1 -1.2 -1 (A) -2 -3 -4 GATE TO SOURCE VOLTAGE VGS -5 (V) Threshold Voltage IS —— VSD -2 -0.8 Pulsed -0.6 VTH Ta=100℃ Ta=25℃ -0.1 -0.01 -0.0 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) -1 -1.0 -1.2 ID=-250uA -0.4 -0.2 -0.0 25 -1.4 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) A,Sep,2015 SOT-523 Package Outline Dimensions Symbol A A1 A2 b1 b2 c D E E1 e e1 L L1 θ Dimensions In Millimeters Min. Max. 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 0.700 0.900 1.450 1.750 0.500 TYP. 0.900 1.100 0.400 REF. 0.260 0.460 0° 8° Dimensions In Inches Min. Max. 0.028 0.035 0.000 0.004 0.028 0.031 0.006 0.010 0.010 0.014 0.004 0.008 0.059 0.067 0.028 0.035 0.057 0.069 0.020 TYP. 0.035 0.043 0.016 REF. 0.010 0.018 0° 8° SOT-523 Suggested Pad Layout www.cj-elec.com 4 A,Sep,2015 SOT-523 Tape and Reel www.cj-elec.com 5 A,Sep,2015