CJK1211

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK1211 P-Channel Enhancement Mode Field Effect Transistor V(BR)DSS ID RDS(on)MAX 25mΩ@-4.5V -12V SOT-23-3L -11A  30mΩ@-2.5V 1. GATE 2. SOURCE 3. DRAIN Application Feature   Advanced trench MOSFET process technology Ultra low on-resistance with low gate charge    PWM application Load switch Battery charge in cellular handset Equivalent Circuit MARKING D G S Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -11 A Power Dissipation PD 450 mW RθJA 313 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient (t